25 January 2007 Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling
Author Affiliations +
Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 65960S (2007) https://doi.org/10.1117/12.726452
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
Non-equilibrium carrier generation, transport, and recombination have been investigated in Fe-doped InP crystals experimentally in subnanosecond time domain by using time-resolved picosecond four-wave mixing technique. The carriers were generated by below band-gap excitation at 1064 nm (hv = 1.17 eV), what allowed photoexcitation of non-equilibrium carriers from/via Fe-related deep levels. The contributions of Fe2+/Fe3+ deep level states and of the excited state Fe2+* have been analyzed by numerical modeling, using the relevant model which took into account carrier generation via different defect states, as well recombination and diffusion. The modeling was helpful to get insight into varying with excitation generation rates of holes and electrons and explained the main features of FWM kinetics and exposure characteristics.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arūnas Kadys, Arūnas Kadys, Ramūnas Aleksiejūnas, Ramūnas Aleksiejūnas, Kęstutis Jarašiūnas, Kęstutis Jarašiūnas, Liudas Subačius, Liudas Subačius, } "Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960S (25 January 2007); doi: 10.1117/12.726452; https://doi.org/10.1117/12.726452
PROCEEDINGS
6 PAGES


SHARE
Back to Top