25 January 2007 Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells
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Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659613 (2007) https://doi.org/10.1117/12.726489
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features.
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Aurimas Čerškus, Aurimas Čerškus, Jurgis Kundrotas, Jurgis Kundrotas, Gintaras Valušis, Gintaras Valušis, Paul Harrison, Paul Harrison, Suraj Khanna, Suraj Khanna, Edmund Linfield, Edmund Linfield, } "Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659613 (25 January 2007); doi: 10.1117/12.726489; https://doi.org/10.1117/12.726489
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