25 January 2007 Electric field effect on electrical memory of inhomogeneously strained La0.67Ca0.33MnO3 films
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Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659617 (2007) https://doi.org/10.1117/12.726494
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
Reversible resistance change of thin La0.67Ca0.33MnO3 films, grown on cleaved MgO substrates, have been investigated using both dc current and nanosecond electrical pulses of 10 ns and 100 ns in duration. It was found that at T=80 K the series of 10 ns pulses with electric field strength above 20 kV/cm induced a reversible change of the film from low to high resistive state. At the same time, the series of 100 ns pulses transmitted through the sample with increased resistance induced an inverse effect - i.e. transformation of the film to the initial state. It was also obtained that at 130 K (just below Curie temperature Tc) the series of 100 ns electrical pulses induced the resistive transition at lower electric field value (13.7 kV/cm). The obtained results were explained in terms of local film heating and strong electric field effect on narrow conductive constructions during current flow through channels in electrically inhomogeneous media in the vicinity of Tc.
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Oleg Kiprijanovič, Andžej Lučun, Steponas Ašmontas, Fiodoras Anisimovas, Andrius Maneikis, Bonifacas Vengalis, "Electric field effect on electrical memory of inhomogeneously strained La0.67Ca0.33MnO3 films", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659617 (25 January 2007); doi: 10.1117/12.726494; https://doi.org/10.1117/12.726494
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