Computer simulation of the scaled power bipolar SHF transistor structures

V. V. Nelayev; V. A. Efremov; Yu. P. Snitovsky

doi:10.1117/12.726785

10 April 2007 Computer simulation of the scaled power bipolar SHF transistor structures

V. V. Nelayev, V. A. Efremov, Yu. P. Snitovsky

Proceedings Volume 6597, Nanodesign, Technology, and Computer Simulations; 65971B (2007) https://doi.org/10.1117/12.726785
Event: Nanodesign, Technology, and Computer Simulations, 2006, Olsztyn, Poland

Abstract

New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in comparison with standard technology are demonstrated. Simulation of both technology flows was performed with emphasis on scaling of the discussed device structure.

Citation Download Citation

V. V. Nelayev, V. A. Efremov, and Yu. P. Snitovsky "Computer simulation of the scaled power bipolar SHF transistor structures", Proc. SPIE 6597, Nanodesign, Technology, and Computer Simulations, 65971B (10 April 2007); https://doi.org/10.1117/12.726785

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