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10 April 2007 Computer simulation of the scaled power bipolar SHF transistor structures
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Proceedings Volume 6597, Nanodesign, Technology, and Computer Simulations; 65971B (2007) https://doi.org/10.1117/12.726785
Event: Nanodesign, Technology, and Computer Simulations, 2006, Olsztyn, Poland
Abstract
New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in comparison with standard technology are demonstrated. Simulation of both technology flows was performed with emphasis on scaling of the discussed device structure.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Nelayev, V. A. Efremov, and Yu. P. Snitovsky "Computer simulation of the scaled power bipolar SHF transistor structures", Proc. SPIE 6597, Nanodesign, Technology, and Computer Simulations, 65971B (10 April 2007); https://doi.org/10.1117/12.726785
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