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8 June 2007 Resistive switching and noise in non-volatile organic memories
Lode K. J. Vandamme, Michael Cölle, Dago M. de Leeuw, Frank Verbakel
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Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000B (2007)
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
We found quantitative criteria to characterize the states of the device: i) pristine devices show at low bias I proportional to Vm with m = 0 pointing to trap filling and at higher bias m=6 pointing to tunneling. The 1/f noise is characterized by 10-7 < &agr;&mgr; (cm2/Vs) < 10-5; ii) forming state is a transition between pristine and switched-state. The time dependent soft breakdown in the Al-oxide goes hand in hand with strong discrete multi level resistive switching (RTS) with a 1/f 3/2 spectrum. Once the device is switched in the high (H-) or low (L-) conductance state it never comes back to the pristine state. iii) The H- or L-state is characterized by I proportional to Vm with either m = 1 or m = 3/2. The injection model predicts the current level and the dependence of the 1/f noise on current. Reliable switched devices show mainly 1/f noise. In the L-state there is often a 1/f 3/2 contribution on top of the 1/f noise indicating multi level switching. Reliable switches between the L- and H-state are characterized by a resistance R that changes for example by a factor 30 and the relative 1/f noise, fSI/I2 ≡ C1/f follows the proportionality: C1/f proportional to R with a &agr;&mgr;-value of about 3x10-2 cm2/Vs. The explanation from the noise for C1/f proportional to R is that the number of carrier in the transport switches due a change of the number of parallel conducting paths in the polymer. The onset of switching seems to be at spots of the Al / Al2O3 / polymer interface.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lode K. J. Vandamme, Michael Cölle, Dago M. de Leeuw, and Frank Verbakel "Resistive switching and noise in non-volatile organic memories", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000B (8 June 2007);

Cited by 1 scholarly publication.








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