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8 June 2007 On the mechanisms of low-frequency noise in vertical silicon pnp BJTs
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Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000C (2007) https://doi.org/10.1117/12.724648
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
We present an investigation of low-frequency noise in advanced vertical pnp bipolar junction transistors (BJTs) with differing interfacial oxide thicknesses (10Å, 12Å, and 14Å). Low-frequency noise is observed to exhibit a cubic dependence on IFO thickness. Devices were measured across the temperature range of 90 K to 450 K. From 90 K to 250 K, the magnitude of the low-frequency noise is found to decrease with temperature, but from 250 K to 450 K the noise actually increases with temperature. Devices were hot-carrier (electrically) stressed, and the low-frequency noise was found to be almost unchanged with the addition of stress-induced traps. The transparency fluctuation model is suggested as a possible explanation for the operative noise mechanism, due to the similar dependence of base current and low-frequency noise on interfacial oxide thickness.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Cheng, Enhai Zhao, John D. Cressler, and Jayasimha Prasad "On the mechanisms of low-frequency noise in vertical silicon pnp BJTs", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000C (8 June 2007); https://doi.org/10.1117/12.724648
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