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8 June 2007 1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI
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Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000H (2007) https://doi.org/10.1117/12.724678
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
We report, for the first time, the low frequency noise characteristics of both fully- and partially-depleted SiGe HBTs-on- SOI, both in forward and inverse modes of operation. These SiGe HBTs on thin-film SOI are then compared with bulk SiGe HBTs in order to evaluate how the fundamentally different device structure affects 1/f noise performance. In addition, the impact of substrate voltage, collector doping, and temperature on low-frequency noise is investigated.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Bellini, Peng Cheng, Aravind Appaswamy, John D. Cressler, and Jin Cai "1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000H (8 June 2007); https://doi.org/10.1117/12.724678
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