8 June 2007 Noise optimization of an active pixel sensor for real-time digital x-ray fluoroscopy
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Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000Y (2007) https://doi.org/10.1117/12.717545
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
In this paper, we derive the input referred noise in terms of the on-pixel transistor device dimensions of the main noise sources of our array, namely, the flicker noise of the pixel thin-film transistors (TFTs), and the reset noise. Theoretical calculations and simulation results show that it is desirable to minimize the amplifier TFT gate dimensions, L1 and W1, and to maximize the read-out TFT gate width, W2. Noise curves are presented as a function of transistor dimensions, allowing the designer to choose appropriate device dimensions when designing flat-panel imaging circuits. In addition, it is demonstrated how the optimal amplifier TFT gate width, W1, for the lowest-noise design, changes as a function of the extraneous sense node capacitance. The noise simulations indicate that with proper device dimension design, it is possible to achieve sub-500 electron input referred noise performance.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. H. Izadi, M. H. Izadi, K. S. Karim, K. S. Karim, } "Noise optimization of an active pixel sensor for real-time digital x-ray fluoroscopy", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000Y (8 June 2007); doi: 10.1117/12.717545; https://doi.org/10.1117/12.717545
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