11 June 2007 Low-temperature resistance noise in lightly doped La2-x SrxCuO4
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Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 660020 (2007) https://doi.org/10.1117/12.724649
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
Studies of low-frequency noise in the c-axis resistance of lightly doped La2-x SrxCuO4 (x = 0.03) have revealed distinct switching fluctuations at low temperatures and in magnetic fields B of up to 9 T parallel to the c-axis of the crystal. The switching noise is modulated by some slower events and becomes less prominent with increasing temperature T. Our results demonstrate the existence of multiple metastable states in the presence of B. The overall behavior of the noise is consistent with the picture of microscopic segregation of doped holes into hole-rich regions separated by undoped domains in CuO2 planes. It also strongly suggests that interactions should be included in possible theoretical models to describe the data.
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I. Raičević, J. Jaroszyński, Dragana Popović, G. Jelbert, C. Panagopoulos, T. Sasagawa, "Low-temperature resistance noise in lightly doped La2-x SrxCuO4", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 660020 (11 June 2007); doi: 10.1117/12.724649; https://doi.org/10.1117/12.724649
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