Narrow-linewidth high-power semiconductor laser with external feedback

Zdeněk Buchta; Jan Rychnovský; Josef Lazar

doi:10.1117/12.729504

25 April 2007 Narrow-linewidth high-power semiconductor laser with external feedback

Zdeněk Buchta, Jan Rychnovský, Josef Lazar

Proceedings Volume 6606, Advanced Laser Technologies 2006; 660606 (2007) https://doi.org/10.1117/12.729504
Event: Advanced Laser Technologies 2006, 2006, Brasov, Romania

Abstract

We present an extended cavity laser system based on a tunable high-power laser diode optimized for maximum efficiency of the optical pumping process of Rb atoms. The aplication of the laser system is orineted to employment in an experimental arrangement for production of hyperpolarized gasses (HpG), namely Xenon. It is designed to operate in medical and industrial applications to come. We concentrated on the laser diode emission linewidth reduction because of the efficiency of the optical pumping process. The emission linewidth was reduced approximately from 1 THz to 69 GHz with only half of the total optical power loss and quadruple increase of the power spectral density at the wavelength of desire.

Citation Download Citation

Zdeněk Buchta, Jan Rychnovský, and Josef Lazar "Narrow-linewidth high-power semiconductor laser with external feedback", Proc. SPIE 6606, Advanced Laser Technologies 2006, 660606 (25 April 2007); https://doi.org/10.1117/12.729504

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