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11 May 2007 Influence of environmental components on haze growth
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660707 (2007)
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
With the use of 193nm lithography, haze growth has increasingly become a critical issue for photomask suppliers and wafer fabs. Recent photomask industry surveys indicate the occurrence rate of haze is 10 times higher on 193nm masks compared to 248nm masks. Additionally, work has been presented that shows strong relationship between environmental conditions around the photomask and the occurrence of haze at 193nm. This underscores the need to better understand the basic mechanisms of haze and the measures such as environmental airborne molecular contamination (AMC) control which can be employed to reduce the occurrence of haze in use. A custom excimer laser test system capable of 193nm and 248nm wavelengths was built to accelerate haze growth and to better understand haze formation mechanisms. Work on materials impact on haze growth, such as pellicles and reticle compacts, as well as preliminary findings on environmental impacts have been presented previously. Results indicate even on pristine surfaces haze can grow when contaminants are present in the storage and use environment. The test system has been upgraded to include tight control on the concentration of specific airborne contaminants of concern. The impact of these contaminants and their relative concentrations will be examined in this paper and are presented to aid the industry in determining the level of environmental control needed over the life of a reticle.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph Gordon, David Chan, Larry E. Frisa, Colleen Weins, Christian Chovino, John Keagy, Steve Mahoney, Frank F. Chen, Makoto Kozuma, Kyoko Kuroki, and Takahiro Matsuura "Influence of environmental components on haze growth", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660707 (11 May 2007);

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