11 May 2007 EUV-mask pattern inspection using current DUV reticle inspection tool
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66070L (2007) https://doi.org/10.1117/12.728935
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
EUV mask pattern inspection was investigated using current DUV reticle inspection tool. Designed defect pattern of 65nm node and 45nm node were prepared. We compared inspection sensitivity between before buffer etch pattern and after buffer etch pattern, and between die to die mode and die to database mode. Inspection sensitivity difference was not observed between before buffer etch pattern and after buffer etch pattern. In addition to defect inspection, wafer print simulation of program defect was investigated. Simulation results were compared to inspection result. We confirmed current DUV reticle inspection tool has potential for EUV mask defect inspection.
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Tsukasa Abe, Akiko Fujii, Shiho Sasaki, Hiroshi Mohri, Hidemichi Imai, Hironobu Takaya, Yasushi Sato, Naoya Hayashi, Yumiko Maenaka, "EUV-mask pattern inspection using current DUV reticle inspection tool", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070L (11 May 2007); doi: 10.1117/12.728935; https://doi.org/10.1117/12.728935
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