Impact of mask pellicle effects to OPC quality

Hans Koop; Thomas Schmoeller; Wen-Hao Cheng

doi:10.1117/12.728937

12 May 2007 Impact of mask pellicle effects to OPC quality

Hans Koop, Thomas Schmoeller, Wen-Hao Cheng

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66070N (2007) https://doi.org/10.1117/12.728937
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

Development of extended optical systems using liquid immersion for patterning enables numerical apertures > 1.2 lithography. Hyper numerical aperture (NA) lithography has to deal with extremely oblique incident light, mask polarization, mask topography effects and large diffraction angle from mask feature with tight pitch. Simulation tools predicting highly accurate results based on real experimental data are widely used in the industry and for lithography process development. Predictability of Optical Proximity Correction (OPC) tools is strongly dependent on the amount of physical effects taken into account. Therefore going below 45nm half pitch the correct description of the real mask nature including the effects of mask topography, polarization and pellicle apodization is vital to the success of immersion lithography. In this paper we investigate the impact of pellicle apodization effects predicted by simulations for OPC. Significant pellicle apodization induced CD differences including 1D and 2D OPC structures will be presented. The key emphasis of this paper is to highlight the criticality of an integrated OPC solution including mask polarization, mask topography and pellicle apodization effects for enabling immersion lithography moving beyond 45nm and 32nm nodes.

Citation Download Citation

Hans Koop, Thomas Schmoeller, and Wen-Hao Cheng "Impact of mask pellicle effects to OPC quality", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070N (12 May 2007); https://doi.org/10.1117/12.728937

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