Field results from a new die-to-database reticle inspection platform

William Broadbent; Ichiro Yokoyama; Paul Yu; Kazunori Seki; Ryohei Nomura; Heiko Schmalfuss; Jan Heumann; Jean-Paul Sier

doi:10.1117/12.728953

14 May 2007 Field results from a new die-to-database reticle inspection platform

William Broadbent, Ichiro Yokoyama, Paul Yu, Kazunori Seki, Ryohei Nomura, Heiko Schmalfuss, Jan Heumann, Jean-Paul Sier

Author Affiliations +

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660714 (2007) https://doi.org/10.1117/12.728953
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm, and 130nm nodes.

Citation Download Citation

William Broadbent, Ichiro Yokoyama, Paul Yu, Kazunori Seki, Ryohei Nomura, Heiko Schmalfuss, Jan Heumann, and Jean-Paul Sier "Field results from a new die-to-database reticle inspection platform", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660714 (14 May 2007); https://doi.org/10.1117/12.728953

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