A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for
advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the
comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also
be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG.
Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer,
complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will
include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very
small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these
requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This
new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both
transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan
Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed
defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high
sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm,
and 130nm nodes.