29 May 2007 High-performance reticle inspection tool for the 65-nm node and beyond
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660716 (2007) https://doi.org/10.1117/12.728955
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
A new DUV high-resolution reticle defect inspection platform has been developed. This platform is designed to meet the reticle qualification requirements of the 65-nm node and beyond. In this system, the transmitted and reflected inspection lights are collected simultaneously to produce reticle images at high speed. Transmitted and reflected inspections in the die-to-die (DD) and the die-to-database (DB) modes can be executed concurrently. Both images can be gathered at full synchronization with low noise. Basically, both inspection modes are needed to detect as many types of hard and soft defects as possible. Concurrent inspection saves time from using transmitted and reflected lights sequentially. In this presentation, results of DD and DB inspection using standard programmed defect test reticles as well as advanced 65-nm production reticles, are given, showing high-sensitivity and low-false-count detections being achieved with low operating cost.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tung-Yaw Kang, Chia-Hsien Chen, Chia Hui Ho, Luke Hsu, Yao-Ching Ku, Kazuyoshi Nakamura, Hideyuki Moribe, Takeshi Bashomatsu, Kenichi Matsumura, Keiichi Hatta, Hiroyuki Takahashi, Akira Uehara, Takahiro Igeta, Hiroshi Uno, Ryou Igarashi, and Hiroaki Matsuda "High-performance reticle inspection tool for the 65-nm node and beyond", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660716 (29 May 2007); doi: 10.1117/12.728955; https://doi.org/10.1117/12.728955
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