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14 May 2007 Evaluation of lithography simulation model accuracy for hotspot-based mask quality assurance
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66071E (2007) https://doi.org/10.1117/12.728962
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
Mask topography has effects on important components of optical image formation at 45nm node and beyond, and therefore, the lithography simulation model required for hotspot-based mask quality assurance has to incorporate mask topography effects. Since calculation of mask topography effects involves physical phenomena different from those encountered in resist processes, we propose the concept of the mask & resist dual fitting method that splits the general experimental model into the experimental resist model and the experimental mask model. To realize mask & resist dual fitting, we have developed an experimental mask model, namely, the mask topography approximate model. The mask & resist dual fitting method can improve model fitting accuracy and improve prediction accuracy at hotspots.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Satake, Mitsuyo Kariya, Satoshi Tanaka, Kohji Hashimoto, and Soichi Inoue "Evaluation of lithography simulation model accuracy for hotspot-based mask quality assurance", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071E (14 May 2007); https://doi.org/10.1117/12.728962
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