14 May 2007 ArF Immersion Lithography for 45-nm and beyond
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66071G (2007) https://doi.org/10.1117/12.729263
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
Water-based ArF Immersion Lithography has overcome obstacles and enabled the 45nm node of mass products. Canon has developed immersion exposure system the FPA7000 AS7 for 45nm node. The new platform, the FPA-7000, is designed to cover multiple generations. The lens performance about wavefront aberration of the FPA-7000AS7 is predicted to be less than 4m&lgr;. The illumination performance meets the target required for the 45nm node. A solution tool for optimization is introduced to be connected with the FPA-7000. Moreover, latest studies of immersion, such as nozzle pressure, temperature control and defect inspection result are reported, and also discusses the possibility of high-refractive-index immersion.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akihiro Yamada, "ArF Immersion Lithography for 45-nm and beyond", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071G (14 May 2007); doi: 10.1117/12.729263; https://doi.org/10.1117/12.729263
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