15 May 2007 Novel glass inspection method for advanced photomask blanks
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66072H (2007) https://doi.org/10.1117/12.729000
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
Recently, extremely-high-quality-quartz substrates have been demanded for advancing ArF-lithography. HOYA has developed a novel inspection method for interior defects as well as surface defects. The total internal reflection of the substrate is employed to produce an ideal dark field illumination. The novel inspection method can detect a "nano-pit" of 12nm-EDS, the Equivalent of the Diameter of a Sphere (EDS). It will meet the sensitivity for 32nm node and beyond. Moreover, a type of unique defect is detected, which induces Serious Transmittance Error for Arf-LiTHography. We call it the "STEALTH" defect. It is a killer defect in wafer printing; but it cannot be detected with any conventional inspection in the mask-making process so far. In this paper, the performance of the novel inspection method for quartz substrates and the investigation of "STEALTH" are reported.
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Masaru Tanabe, Masaru Tanabe, Toshiharu Kikuchi, Toshiharu Kikuchi, Masahiro Hashimoto, Masahiro Hashimoto, Yasushi Ohkubo, Yasushi Ohkubo, } "Novel glass inspection method for advanced photomask blanks", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072H (15 May 2007); doi: 10.1117/12.729000; https://doi.org/10.1117/12.729000
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