15 May 2007 New OPC method for contact layer to expand process margin
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660732 (2007) https://doi.org/10.1117/12.729021
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
We have much difficulty to control critical dimension (CD) uniformity for contact layer by optical proximity effect correction (OPC) from 65nm node and below. High mask error enhancement factor (MEEF) in contact layer causes much influence to surrounding layout pattern edges, resulting in long turn-around-time (TAT) from numerous iterations. Methods using nominal OPC cause CD uniformity to get worse depending on pattern layout because MEEF is not considered. Some solutions to this problem may be to calculate MEEF at each pattern edge in order to OPC, and then decide final correction value by using the weight of this MEEF, but additional calculation causes more TAT. We have developed a new OPC method that could optimize pattern layout for contact layer with short TAT because no calculation of each MEEF is necessary. We used our new OPC method to 65nm node LSI. With this method, we were able to control CD uniformity and get good results with no hotspots. Our new OPC method is much useful to OPC for 65nm node and below.
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Mikio Oka, Hidetoshi Oishi, Kensuke Tsuchiya, Hidetoshi Ohnuma, "New OPC method for contact layer to expand process margin", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660732 (15 May 2007); doi: 10.1117/12.729021; https://doi.org/10.1117/12.729021
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