15 May 2007 Thermal analysis of EUV mask under inspection laser beam irradiation
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66073B (2007) https://doi.org/10.1117/12.729030
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
Temperature of EUV mask surface under inspection laser beam irradiation is modeled and simulated. Various conditions including beam power, beam size, irradiation time, and wavelength are considered. Calculation program for this study has two components: at first, average power passing through the film is calculated from optical properties of materials, and then heat transfer equations are solved using finite difference method. Temperature of multilayer below the absorber depends on the optical properties of absorber film surface. At the wavelength of deep ultraviolet region, temperature of multilayer below the absorber rises higher than in the temperature of multilayer directly exposed to the beam.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasushi Nishiyama, Yasushi Nishiyama, Tsuyoshi Amano, Tsuyoshi Amano, Hiroyuki Shigemura, Hiroyuki Shigemura, Tsuneo Terasawa, Tsuneo Terasawa, Osamu Suga, Osamu Suga, } "Thermal analysis of EUV mask under inspection laser beam irradiation", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073B (15 May 2007); doi: 10.1117/12.729030; https://doi.org/10.1117/12.729030
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