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15 May 2007 Evaluation of defect inspection sensitivity using 199-nm inspection optics
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66073F (2007) https://doi.org/10.1117/12.729034
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
We evaluated the capability of a commercially available DUV system equipped with reflective inspection optics with the shortest inspection wavelength of 199nm in detecting pattern defect on EUVL mask of hp45nm programmed defect pattern. The sensitivity of the system for opaque extension defects for hp45nm node was quite acceptable but for clear extension defects the sensitivity of the system was rather poor. In this paper, the influence of base pattern size on inspection sensitivities for opaque and clear extension defects is discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuyoshi Amano, Yasushi Nishiyama, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Hideaki Hashimoto, Shingo Murakami, and Nobutaka Kikuiri "Evaluation of defect inspection sensitivity using 199-nm inspection optics", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073F (15 May 2007); https://doi.org/10.1117/12.729034
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