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15 May 2007 Progress of NIL template making
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66073H (2007) https://doi.org/10.1117/12.729036
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
Nano-imprint lithography (NIL) has been counted as one of the lithography solutions for hp32nm node and beyond. Recently, the small line edge roughness (LER) as well as the potentially high resolution that will ensure no-OPC mask feature is attracting many researchers. The template making is one of the most critical issues for the realization of NIL. Especially when we think of a practical template fabrication process on a 65mm square format that is going to be the industry standard, the resolution of the template making process showed a limitation. We have achieved for the first time an hp22nm resolution on the 65nm template format. Both line and space patterns and hole patterns were well resolved. Regarding dot patterns, we still need improvement, but we have achieved resolution down to hp28nm. Although so far we cannot achieve these resolution limits of various pattern category at the same time on one substrate, an intermediate process condition showed sufficient uniformity both in lateral CD and in vertical depth. Global pattern image placement also showed sufficient numbers at this stage of lithography development. A 20nm feature (with a pitch of 80nm) showed sufficient imprint result.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Yusa, Takaaki Hiraka, Ayumi Kobiki, Shiho Sasaki, Kimio Itoh, Nobuhito Toyama, Masaaki Kurihara, Hiroshi Mohri, and Naoya Hayashi "Progress of NIL template making", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66073H (15 May 2007); https://doi.org/10.1117/12.729036
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