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12 April 2007 Discharge produced plasma source for EUV lithography
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Proceedings Volume 6611, Laser Optics 2006: High-Power Gas Lasers; 66110B (2007) https://doi.org/10.1117/12.740590
Event: Laser Optics 2006, 2006, St. Petersburg, Russian Federation
Abstract
Extreme ultraviolet (EUV) radiation is seen as the most promising candidate for the next generation of lithography and semiconductor chip manufacturing for the 32 nm node and below. The paper describes experimental results obtained with discharge produced plasma (DPP) sources based on pinch effect in a Xe and Sn vapour as potential tool for the EUV lithography. Problems of DPP source development are discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Borisov, A. Eltzov, A. Ivanov, O. Khristoforov, Yu. Kirykhin, A. Vinokhodov, V. Vodchits, V. Mishhenko, and A. Prokofiev "Discharge produced plasma source for EUV lithography", Proc. SPIE 6611, Laser Optics 2006: High-Power Gas Lasers, 66110B (12 April 2007); https://doi.org/10.1117/12.740590
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