12 April 2007 Key optical technologies for experimental nanolithographer
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Proceedings Volume 6611, Laser Optics 2006: High-Power Gas Lasers; 66110C (2007) https://doi.org/10.1117/12.740591
Event: Laser Optics 2006, 2006, St. Petersburg, Russian Federation
Abstract
Results of research activity on development of basic technology for experimental nanolithographer with planned 10÷30 nm resolution are presented. The development circuits of illumination subsystem on base of laser produced plasma source and multimirror extreme ultraviolet reduced camera are analyzed. The manufacture technology of aspherical EUV mirrors with atomic-smooth surfaces and high-precision figure is considered. The illustrations of high-quality aspheric mirrors with supersmooth surfaces and an atomic level roughness are represented. The figure quality of 300-mm concave mirror and convex 120-mm mirrors of reduced camera measured by interferometry at &lgr; = 632 nm have been produced 0,008&lgr; rms and 0,005&lgr; rms respectively.
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A. P. Zhevlakov, A. P. Zhevlakov, O. B. Danilov, O. B. Danilov, } "Key optical technologies for experimental nanolithographer", Proc. SPIE 6611, Laser Optics 2006: High-Power Gas Lasers, 66110C (12 April 2007); doi: 10.1117/12.740591; https://doi.org/10.1117/12.740591
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