13 April 2007 Output parameters of room-temperature green semiconductor lasers as a function of an active region geometry
Author Affiliations +
Proceedings Volume 6612, Laser Optics 2006: Diode Lasers and Telecommunication Systems; 66120F (2007) https://doi.org/10.1117/12.740170
Event: Laser Optics 2006, 2006, St. Petersburg, Russian Federation
Abstract
Characteristics of low-threshold ZnSe-based room-temperature green semiconductor alsers are studied in detail as dependent on transverse size (h) of an active region. It is shown that the efficiency increases with increasing h, then passes through a maximum, and gradually falls down when h exceeds the cavity length L. The effect can be explained by taking into account the excitation of different transversal modes.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. M. Zverev, M. M. Zverev, N. A. Gamov, N. A. Gamov, E. V. Zdanova, E. V. Zdanova, D. V. Peregoudov, D. V. Peregoudov, V. B. Studionov, V. B. Studionov, S. V. Sorokin, S. V. Sorokin, I. V. Sedova, I. V. Sedova, S. V. Ivanov, S. V. Ivanov, P. S. Kop'ev, P. S. Kop'ev, } "Output parameters of room-temperature green semiconductor lasers as a function of an active region geometry", Proc. SPIE 6612, Laser Optics 2006: Diode Lasers and Telecommunication Systems, 66120F (13 April 2007); doi: 10.1117/12.740170; https://doi.org/10.1117/12.740170
PROCEEDINGS
8 PAGES


SHARE
Back to Top