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18 June 2007 Model-based analysis of the limits of optical metrology with experimental comparisons
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This paper presents a summary and analysis of a study on optical modeling for critical dimension metrology. The paper is focused on two primary elements: 1) the comparison, stability, and validity of multiple electromagnetic scattering models and 2) a series of model-to-experiment comparisons. A part of the study will cover improved model-to-theory agreement obtained using our new Scatterfield microscopy technique, which has enabled evaluation of previous unquantified errors. The Scatterfield microscopy technique allows us to step or scan an aperture in a conjugate back focal plane of the objective lens enabling illumination of a narrow cone of incident plane waves at a given primary angle of incidence. A series of angle resolved images or intensity data can be obtained for each angle of illumination.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. Silver, R. Attota, and E. Marx "Model-based analysis of the limits of optical metrology with experimental comparisons", Proc. SPIE 6617, Modeling Aspects in Optical Metrology, 66170W (18 June 2007);

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