18 June 2007 An approach to validation of rigorous modeling in optical CD microscopy by comparison of measurement results with independent methods
Author Affiliations +
Abstract
Optical measurement methods like high resolution microscopy and scatterometry are widely used in photomask and semiconductor metrology. One of the most important measurement tasks is the characterization of line features for CD or linewidth or more general 3D line shape characteristics. For proper simulation of microscopic imaging rigorous diffraction models were applied on isolated and dense as well as clear and opaque photomask line features. The features were also different with respect to edge angle and edge shape as well as optical properties of photomask absorber structures. We report on the results on special test masks with intended larger edge angle variations as well as on high quality photomask line features on CD standards which are used for the 65 nm semiconductor technology node. In order to be able to compare and validate the uncertainty calculations of these results, systematic comparisons with other independently traceable measurement methods on the same features have been performed. For this cross-calibration analysis low voltage SEM as well as additional AFM measurements were used.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Bodermann, B. Bodermann, H. Bosse, H. Bosse, } "An approach to validation of rigorous modeling in optical CD microscopy by comparison of measurement results with independent methods", Proc. SPIE 6617, Modeling Aspects in Optical Metrology, 66170Y (18 June 2007); doi: 10.1117/12.728896; https://doi.org/10.1117/12.728896
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT


Back to Top