11 July 2007 Ge/Al bilayer thin film for optical write-once media
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Proceedings Volume 6620, Optical Data Storage 2007; 66202E (2007) https://doi.org/10.1117/12.738895
Event: Optical Data Storage 2007, 2007, Portland, OR, United States
Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275 °C. Contrasts at 650 nm and 405 nm wavelength are 71.4% and 31.1% respectively.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. H. Wu, T. H. Wu, P. C. Kuo, P. C. Kuo, Jung-Po Chen, Jung-Po Chen, Chih-Yuan Wu, Chih-Yuan Wu, Po-Fu Yen, Po-Fu Yen, Tzuan-Ren Jeng, Tzuan-Ren Jeng, Der-Ray Huang, Der-Ray Huang, Sin-Liang Ou, Sin-Liang Ou, } "Ge/Al bilayer thin film for optical write-once media", Proc. SPIE 6620, Optical Data Storage 2007, 66202E (11 July 2007); doi: 10.1117/12.738895; https://doi.org/10.1117/12.738895

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