This PDF file contains the front matter associated with SPIE Proceedings Volume 6621, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and the Conference Committee listing.

In the present paper, the paraxial lateral aberrations of second order and third order expressed in a general form have been derived emphatically by using asymptotic solutions of paraxial equation of electron optics. The relationship between the coefficients of asymptotic solutions of paraxial equation has been investigated, which proves that the coefficients of asymptotic solutions are related each other. It has proven that the paraxial sphero-chromatic aberration of second order possess an greatest part in whole paraxial lateral aberrations. and the paraxial chromatic aberration of magnification is only related to infinitesimal quantities of third order. Results of the present paper will have theoretical significance for studying theory of imaging electron optics.

Sensitivity, resolution (MTF) and signal to noise ratio are three fundamental performances of a image intensifier, by which night system' detection range or image definition are mainly determined. On basis of photo-electronic imaging theory, a series of analysis and assessment are carried out in the paper on the limit value of the three performances. Under ideal specification conditions theoretical calculation results are given using several expressions, which is ≤ 6569μA/lm of limit sensitivity, ≤ 96 lp/mm of limit resolution and ≤ 64 of limit signal to noise ratio, respectively. These analysis method and results are useful as a strive goal and technical references for those skilled in the art.

To improve the Figure of Merit (FOM) and reduce the Equivalent Background Input (EBI) and Fixed-Pattern-Noise (FPN) in image intensifier, NVT (North Night Vision Technology Co., Ltd) has been researching and developing a low noise and high resolution Micro Channel Plate (MCP). The density of dark current of this new MCP is less than 0.5PA/cm² (when MCP voltage at 1000V). The FPN and scintillation noise are reduced remarkably. Channel diameter is 6 &mgr;m and open area ratio is 60&percent;∼70&percent;. The vacuum bakeout temperature could be as high as 500°C. This new kind of MCP will be extensively used in the supper generation and the third generation image intensifiers.

As polarization is an important characteristic of light, polarization image detecting is a new image detecting technology of combining polarimetric and image processing technology. Contrasting traditional image detecting in ray radiation, polarization image detecting could acquire a lot of very important information which traditional image detecting couldn't. Polarization image detecting will be widely used in civilian field and military field. As polarization image detecting could resolve some problem which couldn't be resolved by traditional image detecting, it has been researched widely around the world. The paper introduces polarization image detecting in physical theory at first, then especially introduces image collecting and polarization image process based on CIS (CMOS image sensor) and FPGA. There are two parts including hardware and software for polarization imaging system. The part of hardware include drive module of CMOS image sensor, VGA display module, SRAM access module and the real-time image data collecting system based on FPGA. The circuit diagram and PCB was designed. Stokes vector and polarization angle computing method are analyzed in the part of software. The float multiply of Stokes vector is optimized into just shift and addition operation. The result of the experiment shows that real time image collecting system could collect and display image data from CMOS image sensor in real-time.

This paper describes a tomographic method is based on 8-electrode capacitance sensor. It discusses the application of finite element method in electrical capacitance tomography, and a finite element model of 8-electrode capacitance sensor is established. Capacitance sensitivity distributions can be analyzed with this method and optimal sensor design can also be done with it. A novel image reconstruction algorithm based on genetic algorithm is presented to improve quality of image reconstruction and calculating accuracy of concentration, satisfactory images can be reconstructed by using the capacitance sensitivity distributions of optimally designed system as a priori information. It provides powerful support for further application research.

A project was presented that instrumental design of an economical CMOS microscope image sensor. A high performance, low price, black-white camera chip OV5116P was used as the core of the sensor circuit; Designing and realizing peripheral control circuit of sensor; Through the control on dial switch to realize different functions of the sensor chip in the system. For example: auto brightness level descending function on or off; gamma correction function on or off; auto and manual backlight compensation mode conversion and so on. The optical interface of sensor is designed for commercialization and standardization. The images of sample were respectively gathered with CCD and CMOS. Result of the experiment indicates that both performances were identical in several aspects as follows: image definition, contrast control, heating degree and the function can be adjusted according to the demand of user etc. The imperfection was that the CMOS with smaller field and higher noise than CCD; nevertheless, the maximal advantage of choosing the CMOS chip is its low cost. And its imaging quality conformed to requirement of the economical microscope image sensor.

The MEMS silicon-micro-machining is the main MEMS technology, which includes the surface-silicon-micro-machining and the bulk-silicon-micro-machining technology; however the bulk-silicon micro-machining technology has a wide application. In this paper, the formation procession of electron multiplier on n-type Silicon substrate by bulk-silicon-micro-machining technology was investigated. A series of electrochemical etching experiments and tests were carried out in three poles electrobath system using HF electrolyte with different concentration. The rate of photoelectrochemical etching on the macropore depends on a few technological parameters, such as doping concentration, operating bias, illumination intensity of the light, HF concentration, and so on. It was found that the formation possibility of the macropore array is directly correlated with crystal orientation of n-type Silicon substrate.

The camera output RGB signals do not directly corresponded to the tristimulus values based on the CIE standard colorimetric observer, i.e., it is a device-independent color space. For achieving accurate color information, we need to do color characterization, which can be used to derive a transformation between camera RGB values and CIE XYZ values. In this paper we set up a Back-Propagation (BP) artificial neutral network to realize the mapping from camera RGB to CIE XYZ. We used the Munsell Book of Color with total number 1267 as color samples. Each patch of the Munsell Book of Color was recorded by camera, and the RGB values could be obtained. The Munsell Book of Color were taken in a light booth and the surround was kept dark. The viewing/illuminating geometry was 0/45 using D₆₅ illuminate. The lighting illuminating the reference target needs to be as uniform as possible. The BP network was a 5-layer one and (3-10-10-10-3), which was selected through our experiments. 1000 training samples were selected randomly from the 1267 samples, and the rest 267 samples were as the testing samples. Experimental results show that the mean color difference between the reproduced colors and target colors is 0.5 CIELAB color-difference unit, which was smaller than the biggest acceptable color difference 2 CIELAB color-difference unit. The results satisfy some applications for the more accurate color measurements, such as medical diagnostics, cosmetics production, the color reappearance of different media, etc.

The fabrication of ion barrier film on microchannel plate (MCP) was introduced. The experimental system for high-temperature vacuum baking on MCP and technological condition were given. The measurement on the electrical properties, the dead-voltage and other parameters of MCP with an ion barrier film were shown. The changes before and after high-temperature vacuum baking were also investigated for the MCP with ion barrier film. By analysis and discussion, it was concluded that high-temperature vacuum baking caused the film's thickness changed, the dead-voltage decreased, and the electron gain decreased with the increase of the film's thickness for the MCP with an ion barrier film.

The stopping power of ion barrier films (IBFs) of Microchannel Plate (MCP) in Generation III image tubes for incident positive ions was described in this paper. Nuclear Stopping Power, Electronic Stopping Power and Mean Range were introduced. These concepts were analyzed and discussed, combined with Tomas-Fermi shielding potential. The results of a Monte Carlo simulation on Nuclear Stopping Power, Electronic Stopping Power and Mean Range were also presented when the ions with different energies were perpendicularly incident to Al₂O₃ and SiO₂ films. The results indicate that the stopping power of Al₂O₃ film is stronger than that of SiO₂, and the selection of Al₂O₃ is reasonable and feasible.

Microsphere plate (MSP) is a new type of electron multiplier device. It is similar to the traditional microchannel plate (MCP) in dimensions and model of operation. Compared with the MCP electron multiplier, the MSP has some unique characteristics such as a high electron gain, without ion feedback and easy to be fabricated, thus it is widely used in the fields of imaging and detecting. However, there are some key technologies to fabricate a satisfied MSP. In this paper, the whole fabrication process of MSP was introduced and some of major processes such as the formation of glass beads, the sintering of MSP body, and the formation of dynode and electrodes were specially discussed. At the end of the paper, the optimal processed for the fabrication of MSP was given.

Holography based extreme high-speed photography (EHSP) is a novel technique to study extreme high speed photography with holography. In order to get multi-frame holograms in high speed holography, studying the framing principle is very important. Coding reference beam is essential to get multi-frame digital hologram. In this paper, multi-frame digital holography based on Fourier transformed setup is presented. We study the azimuth encoding method for the recording theoretically. Point light sources in x-y plane arrange in a narrow circle are selected as reference wave and the object wave is located in origin of x-y plane. Every point light source stands for a certain azimuth angular. For the radius of the circle is much smaller than the recording distance, it can be approximately regarded as quasi-on-axis digital holography. Multiple digital holograms are stored in a single CCD frame, and reconstructed simultaneously. For a certain magnitude of object, the minimize framing angular, namely, the least angular of two neighboring points, is carefully studied. And stationary experiment results are also presented. Theoretic and experimental result show that multi-frame digital holograms with azimuth encoding method can get multiple frames that the EHSP requires. This indicates that, this encoding method can be used in high speed photography to get multi-frame images.

In this paper, the noise and optical aberration which were two controllable factors that affect the image quality in the single-proximity-focusing x-ray image-intensifier were studied. By decreasing the electron gain of microchannel plate (MCP), the noise of the x-ray image-intensifier can be decreased. The optimal operating condition for the image intensifier and the CCD were also investigated. Based on this investigation, the flash-noise of the x-ray image-intensifier can be decreased and the brightness of the image can be improved. At the end of the paper, some results on the image-capturing of the cool CCD with low noise were presented.

To obtain high quality optoelectronic image devices, the phosphor screens should be evaluated before assembled in the devices. The principle and method of measurement are expounded. A measurement system is developed, which can measure luminous efficiency, luminance, non-uniformity of luminance and persistence of phosphor screen. It can also detect the flaws of screen. The system consists of vacuum chamber, electron gun, electrostatic lens system, high voltage supply, imaging luminance meter, luminous flux tester, control units, signal processing circuit, A/D converter, D/A converter, communication unit, industrial computer and measurement software.

Fluorescence screen of Image intensifier is the key part to imaging quality of micro light and ultraviolet Image intensifier. To research the performance testing and analysis of Fluorescence screen seems more important in China. The research will help to understand the performance of Fluorescence screen, know where improvement should be made and then a best performance entire tube will be achieved. This article will do the theory analysis to part of testing instrument, area source electron gun's uniformity. Electron gun consists of taper tantalum filament, vacuum environment and axial symmetry high pressure static field. The uniformity of hot electron emission of filament has been analyzed. Upon that, this article will specially analyze the uniformity of electron in the effective area after they go through the axial symmetry high pressure static field and get accelerated.

A photon imaging system (PIS), which consists of object lens, micro-channel plate (MCP), photomultiplier tube, relay lens, CCD camera and image acquisition system is recently constructed. The dark noise of the whole imaging system has been studied by statistical analysis method. The hypothesis tests method is used to analyze statistical parameters of dark noise. In this test, the Chi-square goodness-of-fit test method is employed to determine which distribution the acquired image information is fit for. Subsequently, the section estimation is used to confirm threshold for spatial denoising process. In order to overcome the effects of the non-uniformity for PIS, we propose a new method to analyze above processes. In this method the image acquired by PIS was divided into many segments, their statistical characters have been studied respectively and the statistical parameters of the noise for the different segments are analyzed based on above method. For the aim of analyzing above acquired statistical parameters and obtaining the relationship in terms of the different operating conditions of the system, several experiments have been implemented and experiment results also be presented.

By use of self-developing more-information measurement instrument, stability under illumination of transmission-mode GaAs photocathode sealed in the third generation intensifier was researched and analyzed. The spectral response curves under ebb-illumination 10lx and strong-illumination 100lx were obtained with illumination time. The results show that during initial several weak illuminations photocathode behaves no obvious decay and a maximum sensitivity was achieved, while under intense illumination the sensitivity of photocathode began to decrease largely at the first illumination. It was also found that under intense illumination the peak wavelength moved towards short-wave and peak response decreased, which show that the ability of long-wave response of photocathode is decreased. The performance parameters of GaAs photocathode were estimated by curve imitate. The result indicated that the variation of surface escape probability with illumination time is the direct cause of instability of photocathode under illumination, at the same time, it was found that the illumination increased the ion bombardment probability in GaAs tube, it was the reason for the decline of the cathode sensitive. The Cs quantity on cathode surface and the purge degree of cathode subassembly were the important factor to the cathode stability.

Taking GaAs and GaN as representation, negative electron affinity (NEA) photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive long-wave threshold, great potential to extend the long-wave spectral response waveband. Therefore it plays more and more important effect in high performance image intensifiers and polarized electron sources. GaN NEA photocathode and GaAs NEA photocathode are very similar because they all belong to III-V compound. But, GaN photocathode and GaAs photocathode have many difference in such aspects as preparation process, activation manners, stability and application field etc. In this paper, using the multi-information measurement and evaluation system of photocathode, the preparation processes of native reflection-mode GaN photocathode and GaAs photocathode are studied. The different activation manners of GaN photocathode and GaAs photocathode are compared and analyzed. The spectral response and stability of the two kind of photocathode are compared also. The experiments indicate: the atomically clean degree of NEA photocathode surface and the structure of activation layer are the main factors that influence photocathode sensitivity and stability after activation. GaN photocathode and GaAs photocathode have good NEA property and large quantum yield. Compare with GaAs photocathode, GaN photocathode has high stability, and the decay of the quantum yield is comparatively slow.

The range-gated laser imaging technology can eliminate the backscattering noise and has a range of from 4 to 6 times that of a conventional camera with floodlights in the strongly scattering waters, which becomes a useful technique in oceanic research, deep-sea exploration, underwater remote control and robotic works. The characteristics of range-gated underwater laser imaging were analyzed in this paper, and the basic requirements for gated ICCD were presented. As a result, Gated Gen II+ Image Intensifier and progressive scanning CCD were assembled together to meet the requirements, which was called the Gate Intensified CCD camera. Combined with the small-sized programmable high voltage power supply, video image acquisition/control system and high power lamp-Pumped blue-green Nd:YAG pulse laser, the experimental system was developed. Experiments were carried out in pipes full of saturated salt water and large pools. When tested by USAF 1951 resolution target, the detecting range can extend to about 30 meters.

Johnson criteria not only compartmentalizes photoelectronic imaging systems' detecting level, but also establishes a relation between imaging systems' detecting level of different target and equivalent stripes with 100% contrast. Base on this criteria we can calculate photoelectronic imaging systems' view range. Blackwell's classic experiments provide basic data of human eyes' contrast detecting. Base on this theory, we get restrict relation between human eyes' contrast threshold and human eyes' resolving power. Base on the two theory, this paper has thoroughly studied the imaging and display parts of TV systems. At the same time, TV systems' view range problem has been discussed in this paper using Johnson criteria and human eyes' contrast threshold curve, combined with the objects' size, the contrast between the objects and the backgrounds, the atmosphere's transfer characteristic, apparent contrast's change. This paper gives a method to calculate TV systems' view range under different detecting and recognizing probabilities. Base on this method and an actual TV system's characteristics, the paper has calculated the view range of representative objects under different detecting and recognizing probabilities.

A novel laser ranging method use Geiger mode APD (avalanche photodiode) array is introduced in this paper. In the proposed method, echo signal is received by APD arrays at gate mode, system fulfill photon counting, curve recover, start-point distinguish, determine the distance of target ultimately. The results show that with this method, we can get a higher precision, farther distance with less laser power, comparing with the traditional laser ranging methods. So a new thinking way for the laser ranging is provided.

The charge packet transfer rate is one of the most important factors of charge transfer losing (CTL) in Charge Coupled Devices (CCD). It is important to build up a model of CCD structure parameters, charge transfer efficiency (CTE), transfer frequency of charge packet and work temperature etc. But it is very hard to build up an exact theoretical model and find the analytical solution neither math nor physics. The traditional discussion of the working principle of CCD build up a nonlinear partial differential equation, but it just consider the remainder electrons concentration while integer k=0. In this paper, we increase the result of the electrons concentration while k=1, 2,..., n, and discuss the result. A more accreted result of the charge packet rate had been got. The result is 81 percent of the CTL which is traditionally discussed about of CCD. Then the CTE in low temperature is discussed using the result. And the optimum frequency of the CCD is corrected also. The correction of the charge packet rate in CCD can enhance the performance of CCD.

Solar blind UV intensified CCD (ICCD) has been widely applied in solar blind UV detection by the advantages of imaging, high sensitivity, photon counting, fast speed of response, large dynamic range, low cost, mature technology and so on. Solar blind UV ICCD consists of UV optical aperture with UV filter, photocathode, micro-channel plate (MCP), phosphor, optical coupling and CCD. The study of solar blind ICCD detection performance starts from the target imaging characteristic. Then the expression of ICCD output SNR is obtained based on the analysis of distributing the image intensifier noise and CCD noise. The detection probability and false alarm probability are expressed by the normal distribution, which are depended on the ICCD output SNR and threshold SNR. A new ICCD detection range model is developed that takes into account ICCD output SNR, threshold SNR, detection probability and false alarm. In according to the study of detection performance, the solution of improving the ICCD detection performance is given.

The multi-alkali photocathode is manufactured on glass surface. The cleanliness of glass surface affects greatly the sensitivity of photocathode. The experience proved that the glow discharge process of glass surface could improve the photocathode sensitivity, but superfluous glow discharge process could also increase the carbon-content of the surface, so that bring on the decay of photocathode sensitivity. This article introduces the effect of glow discharge on photocathode sensitivity and its stability.

Image intensifier is a device to observe in night. To evaluate the quality of Image intensifier, there are two important data which are resolution and SNR. Analyzing the testing principles of resolution and SNR, a test to super second generation image intensifier is designed. Under the luminance of 1Lx,1×10-3Lx and 1×10-5Lx, test with the same resolution card. It was found that image quality of Image intensifier has the best quality when in luminance of background 1×10-1Lx to 1× 10-3Lx. When luminance of its background is above 1×10-1Lx the noise will be high, see fig.2. When luminance of its background is below1×10-3Lx the signal will be weak. It provides a testing foundation for evaluating the quality of an image intensifier.

When testing the uniformity of Image intensifier fluorescence screen brightness, the million scale CCD brightness meter is used. Due to the distance between the meter and fluorescence screen, the effect of ambient light on the testing result is essential to the design of testing system. Test with super second generation tube, input a constant voltage to insure the fluorescence screen brightness to be constant. Collect the brightness of the same fluorescence screen in different ambient luminance environment of 1×102Lx, 1×101Lx, 1Lx, 1×10-1Lx, 1×10-2Lx, 1×10-3Lx. Study the results with software MATLAB. It is concluded as: In ambient luminance environment of 1×10-1Lx the CCD has the best result. The testing result in ambient luminance environment of above 1×103Lx show untrue image. The testing result in ambient luminance environment of below 1×10-3Lx shows its own noise image and is unbelievable either.

A quick calculation and accurate estimation algorithm with systematic analysis of optical view is crucial in developing sub 2.0μm imager since as the pixel size scales down below 2.0μm, saturation and sensitivity are reduced more than those expected by nominal scaling factor of CMOS process. In this paper, an unconventional treatment by diffraction focal shift theory is proposed for explaining sub 2.0μm imager shrinks in simple optical language for quick and systematic analyzing the behavior trend of sub 2.0μm imager. Owing to the smaller aperture size (i.e. pixel size), the diffraction focal length is much closer micro lens than geometrical focal length in sub 2.0μm imager. We present the effect of diffraction focal shift on sensitivity spectrum of CMOS imager for 1.7μm with aspect ratio of 2.3 and 1.7. We found that as pixel size shrink, for the sake of imager performance, the aspect ratio should shrink also owing to diffraction focal shift phenomena.

The Square Integral Method based on the Minimum Resolvable Contrast (MRC) is to be introduced in this paper as an evolution for the design and evaluation of optoelectronic imaging systems. It is well known that there exists an optimal angle magnification which can make optoelectronic imaging systems and human eye matching optimally, so that optoelectronic imaging systems can performance best. Based on MRC (Minimum Resolvable Contrast) and channel width, a new method called Square Integral (SQI) method was presented for evaluating the general performance of a CCD imaging system, and attaining the optimal angle magnification or optimal viewing distance. Results calculated with this method are in good agreement with the experimental measurements. From the agreement between the practical use and the theoretical predictions for the variation of CCD size, optical focus, luminance and human vision, it demonstrates that the SQI method is an excellent universal measure for the optimal angle magnification and the performance of CCD imaging systems.

A novel multi-object detection and tracking technology based on hexagonal opto-electronic detector is proposed, in which (1) a new hexagonal detector, which is composed of 6 linear CCDs, has been firstly developed to achieve the field of view of 360 degree, (2) to achieve the detection and tracking of multi-object with high speed, the object recognition criterions of Object Signal Width Criterion (OSWC) and Horizontal Scale Ratio Criterion (HSRC) are proposed. In this paper, Simulated Experiments have been carried out to verify the validity of the proposed technology, which show that the detection and tracking of multi-object can be achieved with high speed by using the proposed hexagonal detector and the criterions of OSWC and HSRC, indicating that the technology offers significant advantages in Photo-electric Detection, Computer Vision, Virtual Reality, Augment Reality, etc.

The Infrared radiation experiments on bolt and rock in the process of loading were carried out. It was found that the infrared radiation temperatures of non-bolted block rose wholly and uniformly before stress peak with increase of loading. The bolted rock presented local dissimilation in the thermal image after stress peak. The multi-layer round infrared radiation isothermal lines were formed around bolt. The closer from the bolt centre, the higher, the farther from the bolt centre, the lower temperature was. The temperature was gradually reduced from inside to outside. The change of infrared radiation temperature fields responded to stress fields around bolt. The high infrared radiation isothermal lines corresponded with the high stress areas. The low infrared radiation isothermal lines corresponded with the low stress areas.

The application of the infrared imaging using in the brain cognition and the acupuncture is introduced. Acupuncturing a certain point of the healthy experimental cats, observing the responds of the cerebral cortical temperature by using of infrared imaging, and researching the corresponding relation between the acupuncture points with the active sections of the cerebral cortex, so the effect of the acupuncture is obtained. The theory of the refreshment and induce resuscitation pinprick is approved. The method of the "refreshment and induce resuscitation pinprick" can promote the metabolize renovation, improve the living function and increase the healing rate. However, the relations between the points and the cortical functional sections have not the last word still. After removing the skulls on the head, full of the cerebral cortex of a cat are exposed. Observing the infrared imaging and measuring the temperatures of the visual cerebral cortex during the process of acupuncturing the points to judge the activation position. During the process of acupuncture, the trend of the rising temperature on cerebral cortex is primary in terms of the phenomena in the infrared pictures. The cortical hemogram variety is measured in terms of the infrared pictures and the temperature values, so the characteristic curve of the temperature for a corresponding position on the cerebral cortex and the acupuncture point can be obtained. When the acupuncture point is changed, the position where temperature varied on cerebral cortex is different correspondingly. The variety in the cortical functional sections is corresponding to the result of the acupuncture point in terms of the imaging and the temperatures. The experimental results accord with the theoretic model, so they validate the correctness of the "refreshment and induce resuscitation pinprick". According to the experimental results, we know that the variety of a cortical functional section is corresponding to a special acupuncture point exactly. The similar relations can be applied in human being in terms of the comparative acupuncture. The conclusions of the research can provide the evidences in the infrared pictures and the temperature values for the studies on the acupuncture applied in the field of brain cognition.

A scene-based nonuiformity correction occurred in the operation of recursive reconstruction for high resolution extracted from subpixel microscan imaging (SMI) sequence are presented and analyzed. The reconstruction algorithm in terms of block-by-block method recursive from the prescient boundary to centre in uniform 2×2 SMI, is updated to the two-dimensional focus plane array (FPA) considering the arbitrary scan translation not equivalent to the accurate halfpixel. In this paper, the focus is concentrated to the nonuniform SMI model with fixed pattern noise (FPN), which corrupts the image by the gain and offset from the individual cell-detector. Then, we firstly demonstrate that once our backward recursive reconstruction implements to the undersampled sequence with FPN, the dramatic impact to the majority pixels is the elimination of the offset due to the quits efficiency by inverse iterative function in each 2×2 region belonging to the high resolution lattice. The final achievement is the nonuiformity correction (NUC) synchronously concomitant with the higher resolution, so our method fully takes account of the potential information of the scanned inter-frames. Application of proposed algorithm to the simulated SMI procedure has the obvious superiority, including the much better image quality indexes from the cleaned FPN, time-consumed saving within one scan period (4 frames), no requirements of statistical assumption so as to the avoidance of ghost artifact, and the inter-frames adaptive property.

A high performance, 128×128 pixel, snapshot Readout Integrated Circuit (ROIC) for IRFPA has been fabricated with 0.5μm Double Poly Double Metal (DPDM) n-well CMOS process. The pixel cell circuit uses an improved direct injection structure with only four transistors to maintain large enough integration capacitror. One pixel cell occupies an area of 50×50μm². Each row's pixel signals are readout to the column amplifiers row by row in parallel, while the column amplifiers are reset after each row's pixel signals are readout. The whole pixel cells are reset wholly after a frame signals are all readout. The ROIC structure also provides dynamic image transpositionxinyuanjing xinyuanjing xi (Invert, Revert) function to support a wide range of system requirements. It still has a build-in temperature sensor to detect the temperature of the chip. The measurement results show that the readout chip works well at both room temperature and 77K with 5V supply voltage. The fabricated chip has a maximum charge storage capacity of 6.48×10⁷ electrons and the active power dissipation of about 10mW. The proposed CMOS ROIC structure has been applied to IRFPAs.

A dielectric barrier discharge system with two liquid electrodes and a photoelectric detection system are specially designed to study the spatiotemporal dynamics of square superlattice pattern. Two different types of square superlattice patterns are observed for the first time. They are both composed of the square arranged large and small spots (filaments), while one is without the glow background (type I), and the other one has (type II). The photoelectric measurements indicate that they have the same spatial-temporal behaviors, which are an interleaving of two transient square sublattices - the small-spot square sublattice (S) and the large-spot square sublattice (L). The emerging sequence of the two sublattices in a one cycle of the applied voltage is S-L-L-S-L-L, which is harmonic with the forcing frequency. The dynamic of the glow background of the type II square superlattice pattern is also studied. It is found that the glow background discharge three times in each half cycle of the applied voltage, going with the emergence of each sublattice.

This paper mainly introduces the basic principle, construction, technology and signal process circuit of the developing three primary colors semi-conductor color sensor. This kind of sensor not only possesses the characteristic of a small volume, light weight, fast colorimetric determination, lower power consumption and flexibility, it also can be applied to dynamic situations. And its automatic control can be conveniently realized. The color-sensitive element in sensor is also the chiefly selected product in intelligent and miniaturized colorimetric equipment. Because the color sensitivity element we adopted possesses the structure of three different color sensitivity PN knots which is related to the waves of three primary colors, the sensor possesses the function of self color filtration. Because we don't use a filter, the cost is low, and because we don't use the filtration structure with a filter, the high integration is conveniently achieved. The range of colorimetric determination of the equipment is wide, and it can also be applied to the situation where direct determination is not available, such as in the situation of optical fiber color detection.

In order to obtain the reflective spectrum of fiber grating which has high resolution, an algorithm of the reflective spectrum was pesented, which can realize high scaning's frequency and high resolution synchronous, that is to say, it can deal with the obtained reflective spectrum by image interpolation algorithm using many-knot spline function. It can be shown that inserted reflective spectrum's resolution increase 2 times. The experimental results proved that it has certain instructional significance by image interpolation algorithm using many-knot spline function deal with the reflective spectrum of fiber grating.

An ultra-wide Field staring infrared detection system is introduced for high valuable instruments protection. First the presentation will cover the basic design principles and hardware structure to understand how the system is working, which base on real-time processing. For wide-field and high sensitivity induce high false alarm, the problem is essentially to detect moving point-like targets submerge in abundant background noises. Balance high repetition rate and sensitivity, a simple detect algorithm is introduced. For less spatial target space information can be used, an improved interactive track algorithm is proposed. The characteristic of targets correlation between sequences can be used to reduce system false alarm. Results of basic ground based test are presented. These kinds of system have vast application possibilities such as airborne and maritime platform to surveillance and guidance.

The photoelectric heart rate meter reported in this paper picks up heart rate signals with a photoelectric cell, converts them into standard TTL pulse signal, and sends them into the input capture interface of a single-chip computer Atmega16L. Its input capture register can capture the Timer/Counter value at a given external (edge triggered) event on the input capture pin (ICP1) of T/C1. The counter number is sent into T/C1's input capture register ICR1 after the voltage of the input capture pin ICP1 jumped according to the program setting. The single-chip computer catches the input pulse signal as some numerical values of Timer/Counter (T/C1) and works out a single heart rate cycle and displays by three seven segment tubes, which are the peripheral equipments of the single-chip computer. ICCAVR integrated compiler is applied to assemble and compile the software programs of the heart rate meter. After the programs compiled successfully, a HEX file is produced and downloaded into the single chip computer by software SLISP. This photoelectric heart rate meter can measure the people heart rate efficiently with measurement range of 10-200 times per minute, precision of ± 1%, low cost and reliable performance.

In recent years, ZnMgO semiconductor alloys, with a direct bandgap tunable between 3.37 eV and 7.8 eV, become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated metal-semiconductor-metal photodetectors on 1-μm thick Zn_0.8Mg_0.2O films. The interdigital metal electrodes are 500 μm long and 5 μm wide with an interelectrode spacing 2 μm, 5 μm and 10 μm, respectively. Zn_0.8Mg_0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500°C. Dark current, spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 μm finger pitch, the detectivity was calculated as 4.2×10¹¹ cm Hz^1/2/W at 330 nm. Furthermore, the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns, 170 ns and 230 ns for the devices with different finger pitches of 2 μm, 5 μm and 10 μm, respectively.

In order to analyze the invalidation of the Semiconductor Device and IC, we proposed a novel digital thermal microscope based on the uncooled focal plane detector. We give the operating principle, system's construction and the mathematical mode of noise equivalent temperature difference (NETD). Based on the mathematical model, some measures were taken to increase the system temperature resolution. Furthermore we proposed an adaptive nonuniformity correction algorithm for the UFPA. The software for the thermal microscope is provided based on Visual C++. Results of real thermal image experiments have shown that the digital thermal microscope is designed successfully and achieves good performance. Thus it will become an effective means for invalidation Analysis. This method is a novel and unique contribution to field of semiconductor device and IC invalidation analysis.

In this work, an innovated Si₃N₄ as an out-diffusion barrier layer to Au/Zn/Au contact system for p-type InP has been proposed. Before the contacts were annealed, Si₃N₄ layer was deposited on the Au(200Å)/Zn(700Å)/Au(200Å), then the Si₃N₄ was removed by HF and a 2000A layer of pure gold was deposited to facilitate wire bonding. The specific contact resistance dropped to a minimum value of 6×10^-7 Ω • cm² (for an acceptor concentration of about 3×10¹⁸ cm^-3) and the contact became perfectly Ohmic. Besides, Si₃N₄ layer is an excellent passivation layer and antireflection coating in InP/InGaAs/InP (p-i-n) photodiodes.

The photoelectric measurement of the hexagon pattern in dielectric barrier discharge is performed. By measuring the current signals and the light signals of the hexagon pattern, it is found that there are three main pulses in both of the total current signal and the total light signal. The light signal of a fixed filament in hexagon pattern is also measured. It is found that the spatial location of the filament is unchanged, while its discharge moment is changed with the time, which is probably corresponding to the first pulse, the second pulse or the third pulse of the total light signal. However, no matter when it discharges, the light pulse width for one filament is almost 30 ns, and the ratio of the rising edge to the falling edge of the pulse is about 1:1.88. In addition, the properties of hexagon patterns with the increased gas pressure are investigated. The pattern bifurcation sequence is changed accordingly, and pulse widths of the light signals of the hexagon pattern rises with increasing the gas pressure, which changes from 30ns (at 0.3atm) to 107ns (at 1atm), and the ratio changes from 1:1.88 to 1:3.

AlGaN is am important ultraviolet optoelectronic material and inductively coupled plasma (ICP) etching plays an important role in fabrication of mesa structures of AlGaN-based photodiodes. In this work, we investigate ICP etching processes of Al_0.32Ga_0.68N and Al_0.47Ga_0.53N. The Al_0.32Ga_0.68N and Al_0.47Ga_0.53N materials were firstly tested by transmission spectra and it indicates that they are different materials with different epitaxial quality. Cl₂/Ar/BCl₃ were used as the ICP gases, and Cl₂/Ar mixing ratio was fixed at 4:1. Etching behaviors were characterized by varying the ICP power, the dc bias, Cl₂/Ar/BCl₃ mixing ratio. ICP power influences etching rates. Dc bias heavily influences the etching rates, and the etching rates increase monotonously with dc bias, which suggests that the ion-bombardment effect is an important factor of these etching processes. BCl₃ is the effective removal of oxygen during the etching, and also influences etching rates. The surface rms roughness was measured by an at omic force microscope. The ICP etching surface morphologies were studied by Scanning Electron Microscope (SEM). The results show dc bias and BCl₃ are important to electrical characteristics of epitaxial materials. At a relative high dc bias and more BCl₃, the etching rate is low, but the damage is low. These results have direct application to the fabrication of AlGaN-based ultraviolet optoelectronic devices.

Radiance transfer standard detector (RTSD) is a trap-based facility used as transfer standard detector for radiance measurements. In this paper, a RTSD with band-center wavelength of 550nm is calibrated and the result of absolute spectral radiance responsivity (ASRR) calibration is presented. The relative uncertainty in the absolute spectral radiance responsivity calibration of the RTSD is less than 8×10^-3.

The uncooled InGaAs-based infrared detector has received great interest in recent years for its application in optical-fiber communication and remote sensing. However, the improvement of device performance is hampered by the lack of feasible method to monitor its device process. The Microwave Photoconductivity Decay (μ-PCD) technique is a contactless and non-destructive technique of the recombination lifetime characterization and mapping and has found wide application in semiconductor research. In this paper, a double heterojunction p-i-n InP/In_0.53Ga_0.47As/InP mesa structure was fabricated by Ar⁺ ion etching and the μ-PCD technique was applied to characterize the electrical effects of ion etching on this structure. The results revealed that the built-in field in the p-n junction played a critical role in recombination of photo induced minority carriers which made the mesa structure identifiable but not identical with the lifetime mapping of the sample. The recombination lifetime in the mesa was dominated by the recombination process in the edge of the mesa. The lifetime in the etched region was also influenced by the built-in field and increased with the decrease of distance to the mesa area. And ion etching brought great nonuniformity to the photo active cells.

We have investigated wet chemical etching process of n⁺-type Al_0.33Ga_0.67N in 20% (by weight) aqueous KOH solutions at 106°C after Ar⁺ ion beam dry etching treatment. Scanning electron microscope and Auger electron spectroscopy were employed to characterize the surface morphology and stoichiometry with and without wet chemical etching. It is obvious that dry etching damages were reduced after wet chemical etching. We also fabricated two sets of visible-blind p-i-n detectors for comparison. I-V characterization indicated that the average leakage current of the wet etching treated detectors was lower than that of the detectors without treatment by about one order of magnitude. When the reverse bias was -5 V, the leakage currents of wet etching treated devices varied from -2.16×10^-9 to -6.26×10^-9 A and those of untreated detectors varied from -2.68×10^-8 to -3.49×10^-8 A. The peak responsivity at 365 nm was also tremendously enhanced by means of wet chemical etching treatment. It was 0.10 and 0.03 A/W under back illumination, with and without wet chemical treatment, respectively. When the detector was under front illumination, the result was 0.05 and 0.02 A/W, respectively.

Silicon monolithically Optoelectronic Integrated Circuit (OEIC) designed in standard CMOS process has been gradually applied. But Spice models of opticalelectronic devices such as photodetector can not be provided by IC manufactories in OEIC design. A novel Spice model of photodetector is introduced for compatible-design of OEIC in this paper. An N⁺/N-Well/P-Sub photodetector in standard CMOS process is described. The model of CMOS photodetector is completely based on Hspice EDA design software. It includes optical current, dark current, junction capacitor, series resistor, parallel resistor, and even noise characteristic. A four-terminal network structure is utilized to take the place of the photodetector in the model. The whole model can be easily applied to OEIC design as a subcircuit. At 780nm wavelength, the characteristics of the N⁺/N-Well/P-Sub photodiode fabricated in 0.5μm CMOS process are simulated with the Spice model and tested. With a reverse bias of 2.5V, the measured and simulated responsivity is both about 0.25A/W, which indicates the availability of the model. Finally, the compatible-design of OEIC used for optical pickup unit in optical storage system has been accomplished with the novel photodetector model.

This paper presents a nonuniformity correction (NUC) method based on high-order statistics to reduce "ghosting" artifact. Firstly, estimate the motion shift between the current frame and the previous frame of video sequences. When the motion shift exceeds the given threshold, we choose exponential windowing (EW) NUC method or else choose iterative high-order statistics NUC method. The strength of our method lies in its simplicity, low computational complexity, and its good trade-off between nonuniformity correction and "ghosting" artifact reduction. The ability of proposed method is demonstrated by using IR video sequences with both real and simulated nonuniformity.

An integrated Single photon detector (SPD) module that combines a single-photon avalanche photodiode (APD) cooled by thermoelectric cooler and auxiliary circuits has been demonstrated at 1550 nm. We have employed two coaxial cables to suppress the spike noise and introduce the timing gates to extract avalanche signals. In a typical condition of such SPDs, the dark count probability was reduced to 4.7E-5 per pulse, without affecting the detection efficiency (11%) at 218K.

The optical readout principle of focal plane array (FPA) infrared image system based on bi-material cantilever and micro mirror structure is introduced briefly. And the ideal angular sensitivity of the optical readout is about 1.5e-6 radian. While there are two kinds of unexpected shape distortion of FPA, reflecting direction dispersion and reflecting surface bending. With that the distortion limits for perfect detection are calculated. Then the reflecting surface bending effect is analyzed in detail. It shows that the sensitivity may lie on not only the cliff-edge optical filtering effect, which is well known already, but also the light spot moving effect, if the reflecting surface is bended. This effect means that each micro mirror's imaging area on the image plane may not be illuminated equivalently but have a light spot within its boundary if it is bended. And the spot's position changes along with the reflect angle of the mirror. Then the experiment results are given to support this thought. Though there are still obvious shape distortions exist, we obtained IR images of objects about 500K.

Detector is an important device for the far-field laser spot measuring apparatus in form of photoelectrical detector array, for it acts as an optical-to-electrical converter in measure. Two working parameters of n-type HgCdTe photoconductor are discussed in this paper. The fundamental electrical properties of n-type Hg_1-xCd_xTe material are summarized and related to device performance parameters. It can be found that the dark resistance R_d and the voltage responsivity R_v are closely bound up with temperature T and the alloy composition x, and the normalized calculating R_d-T and R_v-T characteristic curves are in good agreement with experimental results at temperature below 20°C. And then the dynamic responses of a detector under laser irradiation are studied by utilizing 2-D transient heat transfer model and empirical formulas. Furthermore, experimental investigation on laser damage in PC-type HgCdTe devices is operated by a means named 1on1. Detectable change in performance parameters has not been found under the irradiation of in-band laser, at power density beyond the detector linear response zone, and time of 200s. When the power of irradiation strengthened, the dark resistance increased, and the responsivity reduced. By observing the surface morphology of HgCdTe wafers, calculating the compositions x from R_d-T characteristic, the causes for performance changing has been analyzed.

The applications of the joint transform correlator are partly limited by the information loss of the power spectra while being detected and transmitted by conventional detectors and electrically addressed spatial light modulators. The re-writable diarylethene films, which used to be mainly used in optical storage, are successfully tried to detect and transmit the power spectra of the joint transform correlator instead of the CCDs and the electrically addressed spatial light modulators. According to the experiment results and the corresponding comparisons and discussions, the re-writable diarylethene films can be used to detect and transmit the power spectra of the joint transform correlator better than the CCDs and the electrically addressed spatial light modulators in the case of decreasing the information loss. With high resolution and large dynamic range, besides optical storage, the re-writable diarylethene films will be widely used in optically addressed spatial light modulators if the operation period can be shortened remarkably.

In this paper, we introduced a fiber-based endoscopic Spectral-domain Polarization-sensitive OCT (SD-PS-OCT) experimental scheme for detecting the internal organ disease, which is based on low-coherence interferometer and two spectrometers. The SD-PS-OCT has the advantages of both Spectral-domain OCT (SD-OCT) and Polarization-sensitive OCT (PS-OCT). It is able to get the real-time image of reflectivity and birefringence distribution of tissue at the same time. The usage of SD-PS-OCT in endoscopic diagnosing system provides it the possibility to detect the internal organ disease. Since SD-PS-OCT can image the pathological changes of biological tissue below surface (1-3mm) with high resolution (1-15μm), it is able to help diagnosing early diseases of internal organs, which makes it a biomedical technology with bright future.

Polarization-sensitive optical coherence tomography (PS-OCT) is an emerging biomedical imaging technology using polarized light. To describe the imaging priciple of PS-OCT, we develop a Monte Carlo model for polarized light propagating through a multiple layered birefrigent medium. The simulation uses Stokes formalism, which completely characterizes the optical polarization properties of biological tissue. In this paper, we described the procedure and algorithm of our Monte Carlo simulation in detail and discussed the difference of using Henyey-Greenstein function and Mie theory calculating the azimuthal angles which are essential for simulation. We investigated a model of biological tissue with each layer having a different birefringence. The oscillations of Stokes vector verified the correction of our simulation.

Due to the phasing effects, the measurements of Minimum Resolvable Temperature Difference (MRTD) for Staring array thermal imagers often get abnormal results when the targets approaching system Nyquist frequency (f_n). To simulate the relations between MRTD values and four-bar targets' frequencies, this paper introduces the concept of best contrast. Clearly, the MRTD results are inversely proportional to the best contrasts under optimum phases, higher contrast corresponding to a lower MRTD. On the other hand, with the spatial frequencies increasing, the target's opening area shrinking and leads the effective infrared eradiation decreasing, this means the MRTD results are inversely proportional to the opening area of the target. Based on these two assumptions, and through numerical simulations, this paper depicts the tendency chart of MRTD under optimum phases to the four-bar targets' spatial frequencies. The tendency chart adequately explains the hump curve happens at frequencies between 0.6f_n and f_n. From the simulations, the maximum of MRTD values can be predicted at the frequency of 0.89f_n. The tendency chart illustrated by numerical simulation is consistent with the MRTD results get in laboratory. While in Dynamic Minimum Resolvable Temperature Difference (DMRTD) testing, moving the four-bar targets introduces temporal effects not present in static MRTD test. Simulation reveals that DMRTD test can get more realistic shape of the curve between 0.6f_n and f_n, the characteristic hump in the static MRTD curve between 0.6f_n and f_n is not seen.

Microbolometer focal plane array (FPA), as a popular kind of uncooled infrared detector, has a wide range of low cost thermal imaging applications due to its high sensitivity and simple micro-fabrication process. The performance of microbolometer imaging system is determined by many factors such as the property of the FPA, the effect of nonuniformity correction, the condition of operation and so on. In this paper, the micro-structure and heat transfer mechanism of microbolometer FPA are analysed to find out the substrate temperature characteristic. The response nonuniformity of the FPA and corresponding two-point correction method are discussed to find out the calibration temperature characteristic. And the power dissipation property of the thermal-electrical cooler (TEC) integrated under the FPA is described to find out the ambient temperature characteristic. According to the simulation and experiment results obtained from a 320×240 amorphous silicon microbolometer imaging system, it is concluded that all these temperature parameters have a great influence on the system performance and should be well considered for different working conditions to gain high system performance and imaging quality.

Analyze the theory of testing detector's response sensitivity. In accordance with the synthetical requisition of full-automatic testing of the laser fuze, the response sensitivity of infrared detector in the laser fuze were testing by the way of the double light route. The spectral optical system divided the light beam into two beams which were same size, shape and even after the laser light beam were collimated and reformed. The two light rayed the standard detector and unknown detector separately. After we adopted the technology of optical system resisting the stray light, the oscilloscope achieved the response output of two detectors simultaneously. The output data were transferred into the computer by GPIB. It realized the accurate measurement of the detector's response sensitivity. The repeatability of the testing was smaller than 5%. So it was in keeping with the technical target of the laser fuze.

Infrared camera with IR FPA (Focal Plane Array) has often been used in the fields of target detection, temperature test, surface detection, and so on. And it is very important to run the Non Uniformity Correction (NUC) correction firstly to solve the non-uniformity of FPA which is the inherent character of IR FPA. The NUC character is the inherent performance of IR FPA which has different response rate among pixels for the same IR radiant. This NUC can decrease sensitivity of IR FPA and reduce the resolution of sensor. There are two kinds of methods to do this correction. One is hardware method which is using the DSP. Another one is software method. Within this device, two-point correction method is used to correct the NUC. The Field Programmable Gate Array (FPGA) is used. The FPGA can do better parallel arithmetic and has more programmability. After the NUC correction, the error analysis of this correction is also made. After the correction, the BPR (Bad Pixel Replacement) can be more than 98%.

This paper discussed the SI-GaAs photoconductive switch entering into the nonlinear mode under the high biased field and the result of photovoltaic delay, as well as, analyzed the phenomena of electric pulses delay under the high biased field. Meanwhile, pose a theory that the captive effects of impurities in deep energy level of semi-conductor materials is the main reason of photovoltaic delay, moreover, calculation to account the relationship between the transmission of charge domain and photovoltaic delay, and received a result that inosculate with the experiment.

An uncooled thermal imaging system with multiple working temperatures will be presented. Transient response performance of α-si microbolometer detectors is simulated firstly when the working temperature varies in the range from -40deg. to +60deg. Simulating results show that α-si microbolometer detectors have coherent response performance in a large range of working temperature, which lay basis for designing uncooled thermal imaging system with multiple working temperatures. Different from traditional thermal imaging systems, this thermal imaging system has three working temperature with an accuracy range of less than ±0.01deg. When working, the temperature control circuit will switch between the working temperatures according to the variety of the environmental temperature. To evaluate this thermal imaging system, we measure its power consumption and NETD in the environmental temperature range from -40deg. to +60deg. The measurement results are that the total power is less than 2500mW and the NETD is less than 120mk. This indicates that the thermal imaging system has nearly the same imaging quality and obviously lower power, compared with traditional thermal imaging systems.

An infrared target tracking system has been introduced in details for unmanned monitor application and its corresponding method for extracting and tracking moving targets from real-time infrared video has also been described. To ensure its real-time implementation on the tracking system, mature motion estimation techniques such as the time-domain statistics method and the DT method are adopted in the tracking method which includes three stages: target extracting, target classification and target tracking. A two-strategy classification method is adopted to improve classification accuracy. The tracking process involves correlation matching between a template and the current motion regions. The motion region with the best correlation is tracked and is used to update the template for subsequent tracking. The infrared target tracking system is based on a high-speed DSP chip with an internet interface, which may transmit the doubtful targets information to monitor center in time. To illustrate the effectivity of the infrared target tracking system, experimental results has been given in the end of this paper.

On propagation characteristic of material surface wave in laser ultrasonic, researching Fizeau fiber interferometer system which implements measure of SAW on YAG laser. Based on interference principle in common laser path, it eliminates a good many shortcomings in measurement means of other SAW, possess low environment demand, simple configuration, easy adjustment, high frequency response and no contacted measurement, highly adapts to laser ultrasonic measure.

A model of photodetector was established, and the expression of the interference to the photodetector caused by sunlight directly propagating into the detector was given. With integrals over area elements, the filling of the view field of the photodetector by the ground was discussed in detail. The expression of the interference to the photodetector caused by sunlight scattered by the ground was deduced. The research presented in this paper is a contribution to the application of photodetectors.

Precision (rms) or accuracy of Satellite Laser Ranging (SLR) system is the most important value. Now centimeter or millimeter level is the international standard of SLR system. The performance of start detector in the system can contribute to or decide the whole system range precision and accuracy. This part is one of the most important parts for system performance. Certainly, laser pulse width and receiving detector rising time, and constant fraction discriminator (CFD), other electronics can also contribute to the system performance. So choosing a suitable start detector can make system to produce the best results, best performance and to show a great important and high percentage for application. This paper introduces the performance test of several optoelectronic detectors as start detector in SLR system, such as DET210, SV2-FC, Ultrafast-2 and GT106 etc. After showing the photodetectors specific parameters, the performance test results as start detector to range ground target and satellites are presented, and last the results are analyzed and compared.

High power sub-nanosecond electrical pulse system based on photoconductive semiconductor switch (PCSS) is reported. To get high power sub-nanosecond electrical pulse, experiments of three kinds of switches such as a lateral semi-insulating GaAs PCSS, gas gap added into the two electrodes of the switch on the GaAs chip and combinatorial switchs of GaAs PCSS with gas switch are triggered by nano-second laser pulse. The source of the triggered laser is YAG lasers, and the width of the laser is about 3.5 ns. A maximum current is only 38A by a single 3.5mm PCSS. The combinatorial switch of a 3mm-gap PCSS and a 0.6~0.8mm gas switch is triggered at the biased voltage 4000V, a high current pulse is acquired with the peak value above 5160A, and ns risetime. The voltage transmission efficiency is more than 100% (129%), which can not be answered for the ohm-theorem. This phenomena is explained with the theorem of plasma.

Four types of lateral photoconductive semiconductor switches (PCSS) made of different materials are compared. The PCSS made of GaAs, InP and Si are triggered by laser pulse to find out the effect on the voltage transmission efficiency. The peak voltage transmission efficiency of GaAs PCSS is 93% at the biased voltage 1500V with the laser energy 1mJ. On the same condition, the InP switch is only 63.63%. The Si switch can only acquire the efficiency 0.02%. The difference of different materials employed for PCSS is analysed. The SiC PCSS is compared with the GaAs PCSS in the relationship of the optical energy and the conduction resistance to analysed the voltage transmission efficiency in theoretics. The university of Missouri-Columbia has done some research on the SiC PCSS, some of their experiment results are reported.

Luminance gain is one of the evaluation parameters for light quantum performance of image intensifier. In the traditional testing methodology of the luminance gain of image intensifier, the result is obtained only by measuring the incident and emergent radiation without considering the spectrum matching. In this paper, the expression of luminance gain is presented by considering the spectral visibility function and spectral character of incident and emergent radiation. Thus a corrective factor is deduced in detail for the practice application pattern. And the adjusted testing methodology of luminance gain of intensifier is studied and realized in a digitized integral system. The results after long running period are compared with those of routine measurements. And the factors that affect the measurement accuracy are analyzed. The results show that the adjusted test methodology has high measurement precision and stability. The methodology can also be used to evaluate such performance of similar imaging devices after adjusting the illuminance source unit.

Visible and near infrared (Vis/NIR) transmission spectroscopy and chemometric methods were utilized to predict the pH values of cola beverages. Five varieties of cola were prepared and 225 samples (45 samples for each variety) were selected for the calibration set, while 75 samples (15 samples for each variety) for the validation set. The smoothing way of Savitzky-Golay and standard normal variate (SNV) followed by first-derivative were used as the pre-processing methods. Partial least squares (PLS) analysis was employed to extract the principal components (PCs) which were used as the inputs of least squares-support vector machine (LS-SVM) model according to their accumulative reliabilities. Then LS-SVM with radial basis function (RBF) kernel function and a two-step grid search technique were applied to build the regression model with a comparison of PLS regression. The correlation coefficient (r), root mean square error of prediction (RMSEP) and bias were 0.961, 0.040 and 0.012 for PLS, while 0.975, 0.031 and 4.697x10^-3 for LS-SVM, respectively. Both methods obtained a satisfying precision. The results indicated that Vis/NIR spectroscopy combined with chemometric methods could be applied as an alternative way for the prediction of pH of cola beverages.

The feasibility of visible and near infrared (Vis/NIR) spectroscopy, in combination with a hybrid multivariate methods of partial least squares (PLS) analysis and BP neural network (BPNN), was investigated to identify the variety of rice vinegars with different internal qualities. Five varieties of rice vinegars were prepared and 225 samples (45 for each variety) were selected randomly for the calibration set, while 75 samples (15 for each variety) for the validation set. After some pretreatments with moving average and standard normal variate (SNV), partial least squares (PLS) analysis was implemented for the extraction of principal components (PCs), which would be used as the inputs of BP neural network (BPNN) according to their accumulative reliabilities. Finally, a PLS-BPNN model with sigmoid transfer function was achieved. The performance was validated by the 75 unknown samples in validation set. The threshold error of prediction was set as ±0.1 and an excellent precision and recognition ratio of 100% was achieved. Simultaneously, certain effective wavelengths for the identification of varieties were proposed by x-loading weights and regression coefficients. The prediction results indicated that Vis/NIR spectroscopy could be used as a rapid and high precision method for the identification of different varieties of rice vinegars.

Soluble solids content (SSC) and pH are two major characteristic used for assessing quality of red wine, and they are also two important quality indexes in the manufacture of red wine. For rapid detection of SSC and pH in red wine, visible and near infrared (Vis/NIR) transmittance spectroscopy technique combined with partial least squares (PLS) and least squares support vector machines (LS-SVM) were used in this study. First, the near infrared transmittance spectra of 175 red wine samples were obtained using Vis/NIR spectroradiometer, then, PLS was applied for reducing the dimensionality of the original spectra, latent variables (LVs) selected by PLS could be used to replace the complex spectral data. All samples were randomly separated into calibration set and validation set. The LVs (selected by PLS) of each sample in calibration set was used as the inputs to train the LS-SVM model, then the optimal model was used to predict the SSC and pH values of samples in validation set based on their LVs. Standard error prediction (SEP) and determination coefficient (r²) were used as the evaluation standards, and the results indicated that the SEP and r² for the prediction of SSC were 0.2313 and 0.9348; while 0.0071 and 0.9986 for pH. This prediction model was more accurate compared with the related research.

In order to improve the detectability of low-light imaging CCD (charge coupled devices), we have brought forward a magnetic mirror device to apply to microchannel electron vase plate ((MEVP)) of low-light imaging system at room temperature. After introduced the principle of restricted electron in magnetic mirror field to accumulate enough time for low-light CCD imaging, magnetic intensity has been calculated discretionary position in the mirror, the formula of electron's velocity direction has been given through the throat of magnetic mirror in this paper. The educed electron's angle distribution between velocity direction and magnetic mirror axis has been simulated at 7-10 degree. This answers for the design needs of microchannel vase plate now. The electron's loop speckle imaging has been obtained by experiment; the result is same as theoretical value. It is proved that if the electrons educed by the magnetic mirror field at the same cone angle and approximate speed, the gain of microchannel plate will be more stable, so that it is favorable to reduce the noise of photoelectronic imaging.

A phase demodulation scheme of interferometic distributed optic fiber sensor (DOFS) for strain and vibrations measurement is proposed in this paper. We discuss the principles of interferometic DOFS based on long-length MZI, and present the preliminary results on the application of distributed optic fiber sensor for the measurements of distributed signals in long-distance region. And illustrate important points in regard to the phase demodulation. The system is all fiber and uses a 3×3 coupler for phase demodulation. Parameters such as strain sensitivity, transverse strain sensitivity, failure strain, and frequency response are discussed. In addition, this technique can yield a large dynamic range with phase amplitudes for its symmetry. The high speed digital processing (DSP) technology is used in the sensor system, which can carry out all operations in real time and promote the resolution of localization. The hardware design of phase demodulation scheme of the sensor is completed and the experimental results are obtained. The new scheme greatly reduces the complexity of practical fiber interferometers and an experimental setup has been implemented to demonstrate its expected merits. The interferometic DOFS has better sensitivity and resolution than the others. In theoretic, it allows fully distributed strain, vibration and acoustic wave measurement over a sensing length of tens of kilometer. At the time of writing, the system is only partially completed; therefore the content of this paper will focus on the principle of distributed optical fiber sensor. The results mainly are presented in laboratory.

The principles of the integrated relation optimum for FPA thermal imagers in this article are established through studying. The targets of the integrated relation optimum for FPA thermal imagers are determined. The integrated relation optimum problems of thermal imager systems are the optimum problems of multi-layers, multi-modes and multi-objects. It is difficult to build up a math model for optimizing because the optimum objects have the special features of discrete, non-number and fuzzy. This article applies the large-scale system control theory and the principles of generalization, serialization, unitization to research and establish the optimum theories and methods of system integration relations. The important factors related to optimum, its vector relations and vector models are researched and determined. The broad sense optimum model system space of thermal imaging systems is researched out and built up which is consisted of object models, tool models and target models. According to the integrated relation optimum features of FPA thermal imagers, the operating procedure for optimizing system integrated relation and assemble relation is worked out. The optimum system relation with a high-integrated common assemble and special assembles is obtained through using the optimum methods. The optimized common assembles are sensor assembles of generalization. The optimized special assembles are infrared optical system assembles of serialization and cooler assembles of serialization. These programs form the top design program of the optimum development for FPA thermal imagers.

This paper reports the design and test of an improved direct-injection readout circuit for infrared focal plane arrays (IRFPA). In this circuit, two selectable capacitors are added in the pixel to accommodate the wide range of illumination conditions. The circuit also supports image transposition (invert/revert). A 128×128 pixels readout circuit chip which uses this improved readout circuit structure has been fabricated. A simple test bench is established to verify the availability of the readout chip. The testing method and results are also presented in this paper. The testing results show the good performance of the readout chip.

Correlation techniques are widely used to extract spectral information from light scattering and other stochastic processes. Within the photon correlation system, the correlating operation must work at a high speed. In this paper, a photon correlator based on microcontroller C8051F was developed. In the photon correlator, the work of counting and scratch is completed by the two 4-bits binary adder 74F161, which is connected to form an 8-bits adder., and the correlation operation of every channel is carried out by the software of C8051F. By probably choosing high speed devices counting of 10ns in width pulses can be counted. The correlation operations including multiplying and addition operation of 56 channels with the circulation program within 3μs were made in interrupt service routine of the C8051F. The work in this paper can be applied in the ultra-fine particle sizing with photon correlation spectroscopy.

The human body detecting by infrared thermography plays an important role in the field of medical treatment, scout and rescuing work after disaster occuring. The infrared image theoretical model is a foundation for a human body detecting because it can improve the ability and efficiency. The essence and significance of the information on the temperature field of the human body in indoor environment is systematically discussed on the basis of physical structure and thermoregulation system. The various factors that influence the body temperature are analyzed, then the method for the calculation of temperature distribution of the surface temperature is introduced. On the basis of the infrared radiation theory, a theoretical model is proposed to calculate the radiant flux intensity of the human body. This model can be applied to many fields.

The Infrared thermal imaging systems has developments advance rapidly during the development of the research and the manufacture technical. And its applied field has going deep into the astronautics, industry, agriculture, medical, traffic and other fields from the national defense and military appliance. Especially in the application of the military, it has come into being a specialty IR System Engineering field. But in many important applications, the lens calibre of the IR thermal imaging systems often be made very large to advance the SNR of the systems. This increased the weight and the research cost of the whole system very much. Many research indicated that the main factor to affect the image quality of the IR systems is the fixed pattern noise (FPN) or spatial non-uniformity under the actual technical and manufacture level. If we using the effective dynamic self-adaptive non-uniformity correction algorithms for the IR system, and use the image enhancement technology simultaneity. We can advance the imaging quality greatly. With this plan, the correction image we got with large F number can receive the level that uncorrected image with 1 or 2 smaller F number. It means the lens calibre of the system will be reduced effectively. And the weight, the cubage and the research cost of the system will be reduced greatly. It will have most important value in the applied of the actual engineering.

Almost two years after the investors in Sarcon Microsystems pulled the plug, the micro-cantilever array based un-cooled IR detector technology is again attracting more and more attention because of its low cost and high credibility. Recently a sort of IR imaging system consisting of micro-cantilever array and optical-readout device is presented. The basic approach is the same: Coat the micro-cantilevers with a bi-material. The absorption of infrared radiation causes a rise in temperature at each pixel which causes the bi-material to bend the cantilever. The resulting change in capacitance is measured by a readout IC. The main advantage of the micro-cantilever approach is that the temperature responsivity (as measured by the percent change in signal per degree) is approximately ten times as large as for VOx micro-bolometers (i.e. 20-50&percent;/°C compared to 2-4&percent;/°C). In this paper, we will discuss the following questions detailed: The imaging principle of the system, the optical-readout principle of the imaging system, the design and produce progress of the FPA and some influence factors and performance parameters of the system. Finally, the trends of this kind of devices will follow.

This paper describes the principle of standoff detection of chemical vapor by remote passive infrared Technology, imparts design ideology to realize detection of on both ends of LWIR window. By calculation of SNR the system performance can be predicted. Also the field experiment results are reported.

In the present paper, the paraxial lateral aberrations of second and third orders in imaging electron optical systems, in which the aberration coefficients are solved by asymptotic solutions of paraxial equation, have been verified and tested by a two-electrode electrostatic spherical concentric system model. The analytical expressions of asymptotic solutions and paraxial lateral aberrations of second and third orders in the two-electrode electrostatic spherical concentric system model have been obtained. Result completely proves that the method and procedure given by Monastyrski to solve the paraxial equation of electron optics by asymptotic solutions are correct and practicable. The Recknagel-Artimovich formula of paraxial sphero-chromatic aberration of second order which possess a greatest part in whole paraxial lateral aberrations has been deduced and confirmed. The concrete expressions of paraxial lateral aberrations of third order have been firstly obtained. Results of the present paper will have theoretical and practical significance for the design of image tubes.