3 March 2008 Analyses and simulation of sensor structure parameters for electrical capacitance tomography system
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Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 662107 (2008) https://doi.org/10.1117/12.790588
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
This paper describes a tomographic method is based on 8-electrode capacitance sensor. It discusses the application of finite element method in electrical capacitance tomography, and a finite element model of 8-electrode capacitance sensor is established. Capacitance sensitivity distributions can be analyzed with this method and optimal sensor design can also be done with it. A novel image reconstruction algorithm based on genetic algorithm is presented to improve quality of image reconstruction and calculating accuracy of concentration, satisfactory images can be reconstructed by using the capacitance sensitivity distributions of optimally designed system as a priori information. It provides powerful support for further application research.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deyun Chen, Deyun Chen, Lili Wang, Lili Wang, Yu Chen, Yu Chen, } "Analyses and simulation of sensor structure parameters for electrical capacitance tomography system", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 662107 (3 March 2008); doi: 10.1117/12.790588; https://doi.org/10.1117/12.790588
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