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3 March 2008 Formation of electron multiplier by utilizing the MEMS bulk-silicon-micro-machining technology
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Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 662109 (2008) https://doi.org/10.1117/12.790590
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
The MEMS silicon-micro-machining is the main MEMS technology, which includes the surface-silicon-micro-machining and the bulk-silicon-micro-machining technology; however the bulk-silicon micro-machining technology has a wide application. In this paper, the formation procession of electron multiplier on n-type Silicon substrate by bulk-silicon-micro-machining technology was investigated. A series of electrochemical etching experiments and tests were carried out in three poles electrobath system using HF electrolyte with different concentration. The rate of photoelectrochemical etching on the macropore depends on a few technological parameters, such as doping concentration, operating bias, illumination intensity of the light, HF concentration, and so on. It was found that the formation possibility of the macropore array is directly correlated with crystal orientation of n-type Silicon substrate.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanjun Gao, Qingduo Duanmu, Guozheng Wang, Ye Li, and Jingquan Tian "Formation of electron multiplier by utilizing the MEMS bulk-silicon-micro-machining technology", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 662109 (3 March 2008); https://doi.org/10.1117/12.790590
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