Below 2.0um CMOS imager technology shrinks

H. W. Lee; C. H. Wu

doi:10.1117/12.790742

3 March 2008 Below 2.0μm CMOS imager technology shrinks

H. W. Lee, C. H. Wu

Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 66210U (2008) https://doi.org/10.1117/12.790742
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

A quick calculation and accurate estimation algorithm with systematic analysis of optical view is crucial in developing sub 2.0μm imager since as the pixel size scales down below 2.0μm, saturation and sensitivity are reduced more than those expected by nominal scaling factor of CMOS process. In this paper, an unconventional treatment by diffraction focal shift theory is proposed for explaining sub 2.0μm imager shrinks in simple optical language for quick and systematic analyzing the behavior trend of sub 2.0μm imager. Owing to the smaller aperture size (i.e. pixel size), the diffraction focal length is much closer micro lens than geometrical focal length in sub 2.0μm imager. We present the effect of diffraction focal shift on sensitivity spectrum of CMOS imager for 1.7μm with aspect ratio of 2.3 and 1.7. We found that as pixel size shrink, for the sake of imager performance, the aspect ratio should shrink also owing to diffraction focal shift phenomena.

Citation Download Citation

H. W. Lee and C. H. Wu "Below 2.0μm CMOS imager technology shrinks", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66210U (3 March 2008); https://doi.org/10.1117/12.790742

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