22 February 2008 Characteristics of intensity modulation in single-mode microchip Nd:YAG lasers with anisotropic feedback and its applications
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Proceedings Volume 6622, International Symposium on Photoelectronic Detection and Imaging 2007: Laser, Ultraviolet, and Terahertz Technology; 66221A (2008) https://doi.org/10.1117/12.790871
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
The characteristic of laser intensity modulation in microchip Nd:YAG lasers with anisotropic feedback is presented, on which a force measurement scheme based is demonstrated. The measurement system is composed of a microchip Nd:YAG laser, a birefringence element (BFE), and an external feedback mirror. Due to the birefringence effect of BFE, the external cavity modulates the laser intensities in two orthogonal directions with a phase difference (PF), which is twice as large as that of the BFE. If a photoelastic element with force loaded on is served as BFE, the PF between two in-quadrature laser intensities is proportional to the force loaded on the photoelastic element. Thus, the force can be easily and conveniently obtained from the PF between two in-quadrature laser intensities. A theoretical model is put forward and is in good agreement with the experimental results. Moreover, the results here can also be applied to displacement measurement. Our researches broaden the optical feedback in application for precision measurement.
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Yidong Tan, Yidong Tan, Shulian Zhang, Shulian Zhang, } "Characteristics of intensity modulation in single-mode microchip Nd:YAG lasers with anisotropic feedback and its applications", Proc. SPIE 6622, International Symposium on Photoelectronic Detection and Imaging 2007: Laser, Ultraviolet, and Terahertz Technology, 66221A (22 February 2008); doi: 10.1117/12.790871; https://doi.org/10.1117/12.790871
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