22 February 2008 Studying of the temporal characteristics of THz from photoconductor switches
Author Affiliations +
Proceedings Volume 6622, International Symposium on Photoelectronic Detection and Imaging 2007: Laser, Ultraviolet, and Terahertz Technology; 662227 (2008) https://doi.org/10.1117/12.790952
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
We have studied the temporal characteristics of terahertz radiation generated by a biased photoconductor antennas triggered by an ultra-short optical pulse. The calculations are based on the current surge model of carrier transport in semiconductors. In our model, we include screening of the bias field by the space charge induced by carrier transport and by the generated terahertz radiation in the model, describing the electromagnetic radiation from a large aperture photoconductor. The surface current density affected by screening, the influence of the exciting optical pulse, time-dependent surface conductivity and time-dependent mobility are also taken into account in the model to describe the electromagnetic radiation from photoconductor antennas. Use these expressions the effect of the optical influence, the surface current density and time-dependent conductivity and mobility have been discussed in detail. The results show that new calculation model is more suitable for photoconductor antennas.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Shi, Wei Shi, Ke Wang, Ke Wang, } "Studying of the temporal characteristics of THz from photoconductor switches", Proc. SPIE 6622, International Symposium on Photoelectronic Detection and Imaging 2007: Laser, Ultraviolet, and Terahertz Technology, 662227 (22 February 2008); doi: 10.1117/12.790952; https://doi.org/10.1117/12.790952
PROCEEDINGS
6 PAGES


SHARE
Back to Top