12 March 2008 The preparation of AZO films with RF sputtering
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Proceedings Volume 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing; 66241O (2008) https://doi.org/10.1117/12.791173
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10-3 Ω • cm.
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Zhinong Yu, Zhinong Yu, Jin Xu, Jin Xu, We Xue, We Xue, Xia Li, Xia Li, Jinwei Li, Jinwei Li, } "The preparation of AZO films with RF sputtering", Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241O (12 March 2008); doi: 10.1117/12.791173; https://doi.org/10.1117/12.791173
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