12 March 2008 The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy
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Proceedings Volume 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing; 66241P (2008) https://doi.org/10.1117/12.791176
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
ITO films have been grown by ion beam-assisted deposition (IBAD) using 90In-10Sn (wt%) alloy. The electrical and optical properties of these films have been investigated as a function of oxygen flux, evaporation rate, ion energy and substrate temperature during deposition. The films with resistivity as low as cm Ω 2.4 × 10-3 Ω • cm (at room temperature) and 8 × 10-4 Ω • cm (at 150°C) have been deposited, and the transmittance of all samples in the visible range is above 82%. The deposited films at room temperature are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21nm, and the surface roughness for the ITO films grown at room temperature is Ra=5.32nm.
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Zhinong Yu, Longfeng Xiang, We Xue, Huaqing Wang, Weiqiang Lu, "The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy", Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241P (12 March 2008); doi: 10.1117/12.791176; https://doi.org/10.1117/12.791176
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