12 March 2008 Influence of hydrogen dilution on bonding configurations and optical absorption properties of a-Si/SiNx composite films
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Proceedings Volume 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing; 662426 (2008) https://doi.org/10.1117/12.791218
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
Infrared absorption and optical transmission combined with the optical absorption model have been used to study the influence of hydrogen dilution on bonding configurations and optical absorption properties of nano-sized amorphous silicon embedded in silicon nitride thin films (a-Si /SiNx). The amount of bonded hydrogen was investigated by the N-H and Si-H infrared absorption bands. The optical band gap and sub-gap absorption coefficient were obtained by optical absorption spectra. It is shown that the film deposited at 20 sccm hydrogen flow rate, which contains the highest bonded hydrogen content, has the maximum optical band gap and the lowest density of defects. Furthermore, the optical band gap and mean size of a-Si nano-grains in SiNx matrix were obtained through simulating the optical absorption data using an optical absorption model. The simulated optical band gap was in good agreement with the experiment results. These results suggest that appropriate hydrogen dilution in the precursor is beneficial to improving the microstructure and optical properties of the a-Si /SiNx composite films.
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Wei Yu, Ya-chao Li, Wen-ge Ding, Jiang-yong Zhang, Yan-bin Yang, Guang-sheng Fu, "Influence of hydrogen dilution on bonding configurations and optical absorption properties of a-Si/SiNx composite films", Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 662426 (12 March 2008); doi: 10.1117/12.791218; https://doi.org/10.1117/12.791218
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