2 May 2007 Radiation damage, range distribution, and site location measurements by channeling technique for Ar, Kr, Xe in Ni after implantation and annealing
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Proceedings Volume 6634, International Conference on Charged and Neutral Particles Channeling Phenomena II; 66340W (2007) https://doi.org/10.1117/12.741916
Event: International Conference on Charged and Neutral Particles Channeling Phenomena II, 2006, Rome, Italy
Abstract
By the methods of channeling and mathematical simulation the distribution profiles of damage produced in Ni under irradiation by ions of He+, Ar+, Kr+, , Xe+ with energy 0.2-1 MeV in the range of doses 1015 ÷ 1017 cm-2 are investigated. Location of the implanted atoms of Xe in a Ni monocrystal lattice is determined; their interaction with radiation defects, kinetics of impurity complexes formation and their configuration are defined.
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G. D. Tolstolutskaya, G. D. Tolstolutskaya, I. E. Kopanetz, I. E. Kopanetz, I. M. Neklyudov, I. M. Neklyudov, } "Radiation damage, range distribution, and site location measurements by channeling technique for Ar, Kr, Xe in Ni after implantation and annealing", Proc. SPIE 6634, International Conference on Charged and Neutral Particles Channeling Phenomena II, 66340W (2 May 2007); doi: 10.1117/12.741916; https://doi.org/10.1117/12.741916
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