8 May 2007 Optical bistability of layer semiconductors in the exciton absorption region
Author Affiliations +
Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 66350F (2007); doi: 10.1117/12.741881
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania
Abstract
The theoretical investigation of the role of bending waves in the process of creating conditions for observing optical bistability in layer semiconductors was performed by the Green function method. Using the 2H-polytype of Pb12 as an example. we showed that effective exciton scattering by oscillations of this type leads to a short wave shift of the frequency tegion. the decrease of its sizes. the widening of the temperature interval optical bistability realization of its observing, the shill the hysteresis loop into bigger intensities and the decrease of its height and width.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Claudia Yu. Zenkova, Valerij M. Kramar, Natallya K. Kramar, "Optical bistability of layer semiconductors in the exciton absorption region", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 66350F (8 May 2007); doi: 10.1117/12.741881; https://doi.org/10.1117/12.741881
PROCEEDINGS
8 PAGES


SHARE
KEYWORDS
Excitons

Crystals

Absorption

Polarization

Phonons

Bistability

Semiconductors

Back to Top