8 May 2007 Surface-barrier sensors on basis of zinc selenide
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Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 66350U (2007) https://doi.org/10.1117/12.741923
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania
Abstract
The paper presents results of experimental investigations of electric and photoelectric properties of the surface-barrier diodes Ni-ZnSe.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Makhniy, V. P. Makhniy, L. I. Arkhilyuk, L. I. Arkhilyuk, V. V. Mel'nyk, V. V. Mel'nyk, } "Surface-barrier sensors on basis of zinc selenide", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 66350U (8 May 2007); doi: 10.1117/12.741923; https://doi.org/10.1117/12.741923
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