11 May 2007 The optimization of magnetic sensitive MOSFET structures
Author Affiliations +
Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 66350Z (2007) https://doi.org/10.1117/12.742077
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania
Abstract
The optimal processing of sensors-provided signal, imposes their integration on the same chip, with the amplifier circuit. In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for double drain magnetotrasistor structure realised in the MOS circuits technology. Using numerical simulation it is emphasized the way in which the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Caruntu, George Caruntu, Cornel Panait, Cornel Panait, } "The optimization of magnetic sensitive MOSFET structures", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 66350Z (11 May 2007); doi: 10.1117/12.742077; https://doi.org/10.1117/12.742077
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

X ray imaging with ePix100a a high speed, high...
Proceedings of SPIE (September 29 2016)
Main noise characteristics for MOS Hall plates
Proceedings of SPIE (December 07 2010)
On the stability of MOS Hall devices
Proceedings of SPIE (January 06 2009)
The optimization of bipolar magnetotransistor structures
Proceedings of SPIE (January 06 2009)
Resolution capacity of Hall microsensors in MOS structures
Proceedings of SPIE (December 03 2010)
The detection limit of magnetic microsensors
Proceedings of SPIE (May 07 2007)

Back to Top