26 April 2007 MCT epitaxial layers characterization from IR transmittance spectra
Author Affiliations +
Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663606 (2007) https://doi.org/10.1117/12.742296
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
Transmittance spectra of epitaxial layers grown on the basis of mercury and cadmium telluride (MCT) alloys have been measured within the wavelength number range of (5000 cm-1<ν<500 cm-1). P-type epitaxial layers were grown both by liquid-phase epitaxy method (LPE) on CdZnTe substrates and molecular-beam epitaxy (MBE) on GaAs substrates. The MCT layer parameters such as epitaxial layer thickness d, cutoff wavelength λ05, composition x were calculated from the spectra. JR transmittance spectra simulation method was developed to determine the semiconductor multilayer structures characteristics. Fourier Transform (FT) method was suggested to determine the thickness of MCT epitaxial layers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. O. Boltar, N. I. Yakovleva, "MCT epitaxial layers characterization from IR transmittance spectra", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663606 (26 April 2007); doi: 10.1117/12.742296; https://doi.org/10.1117/12.742296
PROCEEDINGS
7 PAGES


SHARE
Back to Top