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26 April 2007 Organic materials and structures for photoelectronics
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360B (2007) https://doi.org/10.1117/12.742311
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
Brief history and development trends of organic materials based photosensitive devices including home activities in this field are presented. New home-made organic materials are briefly reviewed including DA - BuTAZ, Zn ( OB-pDA), Zn (OBGO)2 , Zn (OBBA)2 PTA. Data are presented for new organic materials optical properties (both photoluminescence and absorption) in the wide spectral range. It's noted that large Stokes shift is generally observed between optical absorption and luminescence bands. Two layer device structures characteristics have been studied. Data are presented for their current-voltage and photoelectric characteristics. It's noted that photosensitivity spectra have complicated character resembling that of absorption its maximum being located in UV spectral region. Comparison between organic and inorganic photodetectors is presented. Several differences are observed namely power-law current-voltage dependence and essential increase of photosensitivity with applied voltage.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg N. Ermakov, Michail G. Kaplunov, Oleg N. Efimov, and Sergey A. Stacharny "Organic materials and structures for photoelectronics", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360B (26 April 2007); https://doi.org/10.1117/12.742311
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