Translator Disclaimer
26 April 2007 Radiation-proof photodetectors for spectral region 0.35÷1.1 μm
Author Affiliations +
Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360C (2007) https://doi.org/10.1117/12.742320
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
Article is devoted to development and research of radiation resistance of photodiodes on the basis of layered compounds ЭaCe, БlHCe, ЭaTe intended for visible and near IR-region of a spectrum and the process of diffusion of various impurity in layered semiconductors. It is shown that in new manufacturing techniques of photodiode structures initial materials ЭaCe, ЭaTe and БlHCe were exposed to influence ionizing irradiations at small fluences, and then on them processes of diffusion of compensating elements with preliminary annealing were made. Specified changes in technology of reception of photosensitive elements have allowed to receive photodiode structures with more than five elements. Radiation resistance of the researched photodiodes have been determined and the opportunity of their use under conditions of high radiation is revealed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. A. Askerov, M. G. Bektashi, V. I. Gadzhiyeva, and D. Sh. Abdinov "Radiation-proof photodetectors for spectral region 0.35÷1.1 μm", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360C (26 April 2007); https://doi.org/10.1117/12.742320
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top