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2 May 2007 Plasmon-phonon interaction in α-Ag2Se thin films
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360S (2007) https://doi.org/10.1117/12.742526
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
For the first time on the experimental IR reflection spectra R(λ) of α -Ag2Se films with charge carrier concentration 4,0 x 1018 cm-3 at 300 K behind of plasma minimum (1150 cm-1) are detected two further minimums (800 cm-1 and 550cm-1), stipulated by interaction of plasmon and long-wave optical (LO) phonons. It was founded the peculiarities in the behaviour of the optical function (ε1; ε2; -Im ε-1) at the interaction of the free charge carrier with the polarizable ions of lattice oscillations. The frequency of longitudinal and transversal phonons is calculated.
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Sh. M. Alekperova, A. A. Aliyev, Kh. D. Jalilova, and G. S. Gadjiyeva "Plasmon-phonon interaction in α-Ag2Se thin films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360S (2 May 2007); https://doi.org/10.1117/12.742526
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