26 April 2007 Structure and photoelectric properties of Pb1-xMnxSe epitaxial films
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360X (2007) https://doi.org/10.1117/12.742554
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02÷0.04) epitaxial films grown by the molecular beams condensation method in vacuum 10-4 Pa on BaF2 (111) substrate have been investigated. It is shown that received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the forbidden band of Pbl-xMnxSe solid solutions with increase of manganese content.
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I. R. Nuriyev, M. B. Gadzhiyev, R. M. Sadigov, A. M. Nazarov, "Structure and photoelectric properties of Pb1-xMnxSe epitaxial films", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360X (26 April 2007); doi: 10.1117/12.742554; https://doi.org/10.1117/12.742554
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