26 April 2007 Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360Y (2007) https://doi.org/10.1117/12.742555
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
Effective thin film heterojunctions SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu were manufactured by the method of electrochemical deposition. It is shown, that not treated heterojunctions possess the sensitivity only in visible region of spectrum. At illumination by the solar simulator with W = 100 mVt/sm2, not treated structures had the following photoelectric parameters: Isc ≈ 4.76 mA/cm2, 0.448 V, D* = 3 x 104 cm x Hz1/2Vt-1. Annealing of samples in air results to substantial increase of photosensitivity is found. After TA at t = 350°C and τ = 9 min, the sensitivity of samples in the 0.8 - 1.0 μm wavelength region sharply increase, that is due to formation of films Cu2Se at thermal annealing by means of diffusion of copper atoms from buffer contact through CdTe to Cd0.8Zn0.2S0.1Se0.9. Thus investigated structures possess following values of short circuit photocurrent, open circuit photovoltage and detectability: 1sc = 19,4 mA/cm2, Uoc = 637 mV, D* = 8 x 106 cm x Hz1/2 x Vt-1.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. M. Mamedov, H. M. Mamedov, S. I. Amirova, S. I. Amirova, } "Photosensitivity of SnO2/Cd0.8Zn0.2S0.1Se0.9/p-CdTe/Cu heterojunctions in visible and near IR regions of spectrum", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360Y (26 April 2007); doi: 10.1117/12.742555; https://doi.org/10.1117/12.742555
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