26 April 2007 Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe
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Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663610 (2007) https://doi.org/10.1117/12.742599
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
The effect of an annealing at 100-110 °C on contact resistance (rk) and adhesive strength of the contacts to Pb1-xMnxTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on rk is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag2Te.
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T. D. Aliyeva, T. D. Aliyeva, G. D. Abdinova, G. D. Abdinova, N. M. Akhundova, N. M. Akhundova, B. Sh. Barkhalov, B. Sh. Barkhalov, } "Electrical properties of the metal-semiconductor structures on the basis of Pb1-xMnxTe", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663610 (26 April 2007); doi: 10.1117/12.742599; https://doi.org/10.1117/12.742599
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